Planarization method, method for polishing wafer, and CMP system
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/66
H01L-021/306
H01L-021/67
H01L-021/3105
B24B-037/013
B24B-049/12
출원번호
US-0292162
(2014-05-30)
등록번호
US-9425109
(2016-08-23)
발명자
/ 주소
Cheng, Chung-Liang
Chen, Yen-Yu
Lee, Chang-Sheng
Zhang, Wei
출원인 / 주소
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
대리인 / 주소
McDermott Will & Emery LLP
인용정보
피인용 횟수 :
3인용 특허 :
10
초록▼
A planarization method is provided. The planarization method includes providing a wafer, in which the wafer includes a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer, p
A planarization method is provided. The planarization method includes providing a wafer, in which the wafer includes a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer, performing a chemical-mechanical planarization (CMP) process on the planarization layer, providing an incident light to a surface of the wafer under the CMP process, detecting absorption of the incident light by the surface layer; and stopping the CMP process in response to an increase in the detected absorption of the incident light.
대표청구항▼
1. A planarization method comprising: providing a wafer, wherein the wafer comprises a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer;performing a chemical-mechanical p
1. A planarization method comprising: providing a wafer, wherein the wafer comprises a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer;performing a chemical-mechanical planarization (CMP) process on the planarization layer;providing an incident light to a surface of the wafer under the CMP process;detecting absorption of the incident light by the surface layer; andstopping the CMP process in response to an increase in the detected absorption of the incident light. 2. The planarization method of claim 1, wherein the photon energy of the incident light is greater than the band gap energy of the surface layer. 3. The planarization method of claim 1, wherein the photon energy of the incident light is greater than approximately 5.2×10−19 joules. 4. The planarization method of claim 1, wherein the detecting comprises: detecting photoluminescence emitted by the surface layer due to the absorption of the incident light. 5. The planarization method of claim 1, wherein a photon energy detection range of the detecting encompasses the band gap energy of the surface layer. 6. The planarization method of claim 1, wherein the detecting comprises: detecting the reflected incident light from the surface layer after the absorption of the incident light. 7. The planarization method of claim 1, wherein the work function layer is made of titanium nitride or silicon nitride. 8. The planarization method of claim 1, wherein the surface layer is made of titanium oxide, titanium oxynitride, or amorphous silicon oxide. 9. A method for polishing a wafer, the method comprising: holding a wafer against a pad;rotating at least one of the wafer and the pad;providing an incident light to an end-point layer on the wafer, wherein the photon energy of the incident light is greater than the band gap energy of the end-point layer;detecting absorption of the incident light by the end-point layer; andstopping the rotation of at least one of the wafer and the pad in response to an increase in the detected absorption of the incident light. 10. The method of claim 9, wherein the photon energy of the incident light is greater than approximately 5.2×10−19 joules. 11. The method of claim 9, wherein the detecting comprises: detecting photoluminescence emitted by the end-point layer due to the absorption of the incident light. 12. The method of claim 9, wherein the detecting comprises: detecting the reflected incident light from the end-point layer after the absorption of the incident light. 13. The planarization method of claim 1, wherein the incident light is a laser light. 14. The planarization method of claim 4, wherein the photoluminescence is detected by an ultraviolet light detector. 15. The planarization method of claim 4, wherein a photon energy detection range of the detecting is from about 2.8×10−19 joules to about 6.6×10−19 joules. 16. The planarization method of claim 6, wherein the reflected incident light is detected by a Raman scattering spectrum detector. 17. The planarization method of claim 16, wherein a wavenumber range of the Raman scattering spectrum detector is from about 800 centimeter−1 to about 2000 centimeter−1. 18. The method of claim 9, wherein a photon energy detection range of the detecting encompasses the band gap energy of the end-point layer. 19. The method of claim 9, wherein the end-point layer is made of titanium oxide, titanium oxynitride, or amorphous silicon oxide. 20. The method of claim 9, wherein the incident light is a laser light.
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이 특허에 인용된 특허 (10)
Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
Mauersberger, Frank; Beckage, Peter J.; Besser, Paul R.; Hause, Frederick N.; Ryan, Errol Todd; Brennan, William S.; Iacoponi, John A., Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques.
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