초록 ▼

Method and apparatus for reducing backside deposition by controlling one or more wafer supports are disclosed. A processing chamber, such as a processing chamber for atomic layer deposition, can include a pedestal and one or more wafer supports configured to extend from the pedestal. A wafer can be

Method and apparatus for reducing backside deposition by controlling one or more wafer supports are disclosed. A processing chamber, such as a processing chamber for atomic layer deposition, can include a pedestal and one or more wafer supports configured to extend from the pedestal. A wafer can be provided over the pedestal, the one or more wafer supports can contact the backside of the wafer to support the wafer, and the one or more wafer supports can be positioned to a height to cause an outer edge of the wafer to sag. The outer edge of the wafer can sag to substantially contact the pedestal or a carrier ring surrounding the pedestal. This can create an edge seal to limit access by process gases to the backside of the wafer during a deposition process.

대표청구항 ▼

1. An apparatus for processing a wafer, the apparatus comprising: a pedestal for supporting the wafer in the apparatus, wherein the pedestal includes a wafer-facing surface extending from a central axis to an outer edge;one or more wafer supports configured to extend from the pedestal to support the

1. An apparatus for processing a wafer, the apparatus comprising: a pedestal for supporting the wafer in the apparatus, wherein the pedestal includes a wafer-facing surface extending from a central axis to an outer edge;one or more wafer supports configured to extend from the pedestal to support the wafer above the wafer-facing surface, the one or more wafer supports symmetrically arranged about the central axis, each of the wafer supports being spaced from the central axis by about half or less than half of the radius of the wafer; anda controller configured with instructions for performing the following operations: (a) providing the wafer over the pedestal and the one or more wafer supports;(b) contacting a backside of the wafer with the one or more wafer supports to support the wafer above the wafer-facing surface; and(c) positioning the one or more wafer supports so that an outer edge of the wafer sags and substantially contacts a surface of the apparatus opposite the backside of the wafer so as to limit access by process gases to the backside of the wafer during a deposition process. 2. The apparatus of claim 1, wherein the one or more positioned wafer supports causes the outer edge of the wafer to substantially contact the wafer-facing surface of the pedestal. 3. The apparatus of claim 1, further comprising: a carrier ring having an annular body and surrounding the outer edge of the wafer-facing surface of the pedestal. 4. The apparatus of claim 3, wherein the one or more positioned wafer supports causes the outer edge of the wafer to substantially contact the carrier ring. 5. The apparatus of claim 3, wherein the carrier ring defines a lower gap between a bottom surface of the carrier ring and the pedestal and defines an upper gap between an upper surface of the carrier ring and the wafer, the bottom gap being less than about 6 mil and the upper gap being less than about 3 mil. 6. The apparatus of claim 5, wherein the upper gap is less than about 1 mil when the one or more wafer supports are positioned. 7. The apparatus of claim 1, wherein the one or more wafer supports comprises at least three minimum contact area (MCA) support members symmetrically arranged about the central axis. 8. The apparatus of claim 7, wherein the at least three MCA support members are arranged in a triangular pattern about the central axis. 9. The apparatus of claim 1, wherein the one or more wafer supports comprises an annular support member symmetrically arranged about the central axis of the wafer-facing surface of the pedestal. 10. The apparatus of claim 1, wherein the outer edge of the wafer sags at least about 2 mil below a center of the wafer when the one or more wafer supports are positioned. 11. The apparatus of claim 1, wherein at least 90% of the outer edge of the wafer makes contact with the surface of the apparatus when the one or more wafer supports are positioned. 12. The apparatus of claim 1, wherein the one or more wafer supports are more proximate to the central axis than the outer edge of the wafer-facing surface. 13. The apparatus of claim 12, wherein the deposition process is an atomic layer deposition (ALD) process. 14. An apparatus for processing a wafer, the apparatus comprising: a pedestal for supporting the wafer in the apparatus, wherein the pedestal includes a wafer-facing surface extending from a central axis to an outer edge;an annular wafer support arranged about the central axis and configured to support a backside of the wafer at an outer edge of the wafer; anda controller configured with instructions for performing the following operations: (a) providing the wafer on the pedestal and over the annular wafer support; and(b) contacting a backside of the wafer at the outer edge of the wafer with the annular wafer support to support the wafer above the wafer-facing surface so as to limit access by process gases to the backside of the wafer during a deposition process, wherein the annular wafer support is positioned above the wafer-facing surface to induce sag at the center of the wafer. 15. The apparatus of claim 14, wherein the outer edge of the wafer is raised by at least about 2 mil above the wafer-facing surface of the pedestal when the annular wafer support is positioned.