Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam
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One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon
One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.
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1. A method of manufacturing a polycrystalline silicon thin film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method of manufacturing a polycrystalline silicon thin film solar cell comprising: preparing a substrate;depositing a ty
1. A method of manufacturing a polycrystalline silicon thin film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method of manufacturing a polycrystalline silicon thin film solar cell comprising: preparing a substrate;depositing a type 1+ amorphous silicon layer in which the type 1+ amorphous silicon layer is formed on the substrate;depositing a type 1 amorphous silicon layer in which the type 1 amorphous silicon layer is formed on the type 1+ amorphous silicon layer;forming an absorption layer in which the absorption layer is formed by crystallizing the type 1 amorphous silicon layer and the type 1+ amorphous silicon layer by irradiating the type 1 amorphous silicon layer with a linear electron beam;depositing a type 2 amorphous silicon layer in which the type 2 amorphous silicon layer is formed on the absorption layer; andforming an emitter layer in which the emitter layer is formed by crystallizing the type 2 amorphous silicon layer by irradiating the type 2 amorphous silicon layer with a linear electron beam,wherein the linear electron beam is irradiated in a linear scan mode in which the linear electron beam is reciprocated within a predetermined distance on the type 1 and type 2 amorphous silicon layers. 2. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1, wherein, in the preparing of the substrate, the substrate is a glass substrate or a metal foil. 3. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1, wherein the type 1 and type 2 amorphous silicon layers are formed by plasma enhanced chemical vapor deposition (PECVD). 4. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 3, wherein the linear electron beam has an energy of 1.5 keV to 5 keV and an irradiation time of 30 seconds to 120 seconds. 5. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 3, wherein, in the forming of the absorption layer and the forming of the emitter layer, a process pressure is 3×10−4 torr and a process time is 25 seconds to 200 seconds. 6. The method of manufacturing a polycrystalline silicon thin film solar of claim 3, wherein the type 1+ amorphous silicon layer is formed to a thickness of 200 nm, and the type 1 amorphous silicon layer is formed to a thickness of 1 μm to 1.5 μm. 7. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 3, wherein the type 2 amorphous silicon layer is formed to a thickness of 100 nm. 8. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 3, wherein a grain size along a direction horizontal to the absorption layer is 200 nm. 9. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 3, wherein the linear electron beam comprises electrons that are separated from argon ions by a plasma generated from argon gas which is injected at 50 sccm. 10. A method of manufacturing a polycrystalline silicon thin film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method of manufacturing a polycrystalline silicon thin film solar cell comprising: preparing a substrate;depositing a type 1+ amorphous silicon layer in which the type 1+ amorphous silicon layer is formed on the substrate;depositing a type 1 amorphous silicon layer in which the type 1 amorphous silicon layer is formed on the type 1+ amorphous silicon layer;forming an absorption layer in which the absorption layer is formed by crystallizing the type 1 amorphous silicon layer and the type 1+ amorphous silicon layer by irradiating the type 1 amorphous silicon layer with a linear electron beam;depositing a type 2 amorphous silicon layer in which the type 2 amorphous silicon layer is formed on the absorption layer; andforming an emitter layer in which the emitter layer is formed by crystallizing the type 2 amorphous silicon layer by irradiating the type 2 amorphous silicon layer with a linear electron beam. 11. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 10, wherein, in the preparing of the substrate, the substrate is a glass substrate or a metal foil. 12. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 10, wherein the type 1 and type 2 amorphous silicon layers are formed by plasma enhanced chemical vapor deposition (PECVD). 13. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 12, wherein the linear electron beam has an energy of 1.5 keV to 5 keV and an irradiation time of 30 seconds to 120 seconds. 14. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 12, wherein, in the forming of the absorption layer and the forming of the emitter layer, a process pressure is 3×10−4 torr and a process time is 25 seconds to 200 seconds. 15. The method of manufacturing a polycrystalline silicon thin film solar of claim 12, wherein the type 1+ amorphous silicon layer is formed to a thickness of 200 nm, and the type 1 amorphous silicon layer is formed to a thickness of 1 μm to 1.5 μm. 16. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 12, wherein the type 2 amorphous silicon layer is formed to a thickness of 100 nm. 17. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 12, wherein a grain size along a direction horizontal to the absorption layer is 200 nm. 18. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 12, wherein the linear electron beam comprises electrons that are separated from argon ions by a plasma generated from argon gas which is injected at 50 sccm.
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이 특허에 인용된 특허 (1)
Falk,Fritz; Andrae,Gudrun, Multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate and method of producing.
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