Method of fabricating hafnium oxide layer and semiconductor device having the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/02
C23C-016/02
C23C-016/40
C23C-016/455
C23C-016/56
출원번호
US-0200780
(2016-07-01)
등록번호
US-9831085
(2017-11-28)
우선권정보
KR-10-2015-0094397 (2015-07-01)
발명자
/ 주소
Kil, Deok Sin
Roh, Jae Sung
출원인 / 주소
SK Hynix Inc.
대리인 / 주소
IP & T Group LLP
인용정보
피인용 횟수 :
0인용 특허 :
2
초록▼
Provided are a method of fabricating a hafnium oxide layer and a method of fabricating a semiconductor device using the same. The method of fabricating a tetragonal hafnium oxide layer includes providing a substrate and then forming an initial hafnium oxide layer on the substrate. The initial hafniu
Provided are a method of fabricating a hafnium oxide layer and a method of fabricating a semiconductor device using the same. The method of fabricating a tetragonal hafnium oxide layer includes providing a substrate and then forming an initial hafnium oxide layer on the substrate. The initial hafnium oxide layer may have an amorphous structure, a monoclinic crystal structure, or a mixed structure thereof on the substrate. Phase-changing the initial hafnium oxide layer to a tetragonal hafnium oxide layer by heating the initial hafnium oxide layer at a temperature equal to or higher than a phase change temperature to the tetragonal hafnium oxide layer, is performed. Then, the heated tetragonal hafnium oxide layer may be rapidly cooled to suppress nucleation and growth of a monoclinic hafnium oxide in the tetragonal hafnium oxide layer.
대표청구항▼
1. A method for fabricating a tetragonal hafnium oxide layer, the method comprising: forming an initial hafnium oxide layer over a substrate, wherein the initial hafnium oxide layer has an amorphous structure, a monoclinic crystal structure, or a mixed structure thereof;phase-changing the initial ha
1. A method for fabricating a tetragonal hafnium oxide layer, the method comprising: forming an initial hafnium oxide layer over a substrate, wherein the initial hafnium oxide layer has an amorphous structure, a monoclinic crystal structure, or a mixed structure thereof;phase-changing the initial hafnium oxide layer to a tetragonal hafnium oxide layer by heating the initial hafnium oxide layer to a phase change temperature; andrapid-cooling the tetragonal hafnium oxide layer to suppress a nucleation and growth of a monoclinic hafnium oxide from the tetragonal hafnium oxide layer,wherein the rapid-cooling of the tetragonal hafnium oxide layer is performed by a descending temperature time-temperature path,wherein the nucleation and growth of the monoclinic hafnium oxide has a Martensite-like transformation behavior, and the Martensite-like transformation behavior has a time-temperature-transformation curve of initiation of crystallization of a monoclinic hafnium oxide, andwherein the descending temperature time-temperature path is within a left outside region of the curve. 2. The method of claim 1, wherein the initial hafnium oxide layer is formed over the substrate by atomic layer deposition, chemical vapor deposition, physical vapor deposition, or a combination thereof. 3. The method of claim 1, wherein a thickness of the initial hafnium oxide layer is in a range between 20 Å and 200 Å. 4. The method of claim 1, wherein the phase-changing to the tetragonal hafnium oxide layer is performed by a rapid laser annealing process. 5. The method of claim 4, wherein the rapid laser annealing process is performed using a laser spike annealing process, a flash lamp annealing process, a diode laser annealing process, or a combination thereof. 6. The method of claim 1, wherein the rapid-cooling of the tetragonal hafnium oxide layer is performed by cooling the tetragonal hafnium oxide layer down to a temperature T2 for an elapsed time D2, and wherein a phase change based on a Martensite-like transformation of the monoclinic hafnium oxide does not occur during the rapid-cooling. 7. The method of claim 1, wherein the rapid-cooling starts at a first temperature X1 and at a first given time Y1 and completes at a second temperature X2 and at a second given time Y2, wherein the phase-changing of the initial hafnium oxide layer to the tetragonal hafnium oxide layer occurs at a third temperature X3 and at a third give time Y3,wherein Y3 is variable depending on X3 and a relation between X3 and Y3 is defined by a function Y3=f(X3),wherein Y1 is variable depending on X1 and Y2 is variable depending on X2, andwherein X1, Y1, X2, and Y2 are selected so that Y1
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이 특허에 인용된 특허 (2)
Basceri, Cem; Gealy, F. Daniel; Sandhu, Gurtej S., Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide.
Chudzik, Michael P.; Dirahoui, Bachir; Krishnan, Rishikesh; Krishnan, Siddarth A.; Kwon, Oh-jung; Parries, Paul C.; Yan, Hongwen, Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches.
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