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The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorg

The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

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1. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising: a first inorganic acid;at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound; anda solvent,wherein: the second inorganic acid

1. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising: a first inorganic acid;at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound; anda solvent,wherein: the second inorganic acid is at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, and a combination thereof; andthe silane compound is a compound represented by a first formula: where each one of R1 to R4 is selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, and at least one of R1 to R4 is one of halogen or (C1-C10) alkyl, andwherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition. 2. The composition of claim 1, wherein the first inorganic acid is at least one selected from the group consisting of a sulfuric acid, a nitric acid, a phosphoric acid, a silicic acid, a hydrofluoric acid, a boric acid, a hydrochloric acid, a perchloric acid, and a combination thereof. 3. The composition of claim 1, wherein the composition further comprises about 0.01 to about 20 wt % of an ammonium based compound in respect to a total weight of the composition. 4. The composition of claim 1, wherein the composition further comprises about 0.01 to about 1 wt % of a fluoride based compound in respect to a total weight of the composition. 5. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising: a first inorganic acid;at least one of silane inorganic acid salts produced by reaction between a polyphosphoric acid and a silane compound, wherein the at least one of silane inorganic acid salts includes a compound represented by a first formula: where i) R1 is selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, ii) n1 is one of integer numbers from 1 to 4,iii) m1 is one of integer numbers from 1 to 10, and iv) each one of R2 to R4 is hydrogen; anda solvent, and wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the polyphosphroic acid, and the solvent comprising the remaining balance of the wt % of the composition. 6. The composition of claim 5, wherein in the at least one of silane inorganic acid salts represented by the first formula, one of hydrogens selected from the group consisting of R2 to R4 is substituted by a substituent represented by a second formula: where i) one of R5 is a coupler to the second formula, ii) the others of R5 are selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, iii) each one of R2 to R4 is hydrogen or substituted by a substituent represented by the third formula, iv) n2 is one of integer numbers from 0 to 3, and v) m2 is one of integer numbers from 1 to 10. 7. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising: a first inorganic acid;at least one of siloxane inorganic acid salts generated through reaction between a second inorganic add and a siloxane compound; anda solvent,wherein the second inorganic add is one selected from the group consisting of a sulfuric add, a fuming sulfuric add, and a combination thereof, andwherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic add salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition. 8. The composition of claim 7, wherein the at least one of siloxane inorganic acid salts includes compounds represented by a sixth formula: where i) each one of R21 and R22 is independently selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, ii) n1 is one of integer numbers from 0 to 3, iii) n2 is one of integer numbers from 0 to 2, iv) m1 is one of integer numbers 0 and 1, v) a sum of n1, n2, and m1 is equal or greater than 1 (n1+n2+m1≧1), vi) l1 is one of integer numbers from 1 to 10, and vii) each one of R23 to R25 is hydrogen. 9. The composition of claim 8, wherein in the at least one of siloxane inorganic acid salts, at least one of hydrogens selected from the group consisting of R23 to R25 is substituted by a substituent expressed by a seventh formula: where i) one of R26 and R27 is a coupler to the sixth formula, ii) the others are independently selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, iii) each one of R23 to R25 is hydrogen or is substituted by a substituent expressed by the seventh formula, iv) n3 is one of integer numbers from 0 to 3, v) n4 is one of integer numbers from 0 to 2, vi) m1 is one of integer numbers from 0 to 1, and vii) l1 is one of integer numbers from 1 to 10. 10. A etching composition that selectively etches a nitride layer with respect to an oxide layer comprising: a first inorganic acid;at least one of siloxane inorganic acid salts produced through reaction induced between a second inorganic acid including a nitric acid and a siloxane compound; anda solvent, andwherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition. 11. The composition of claim 10, wherein the at least one of siloxane inorganic acid salts includes compounds represented by an eighth formula: where i) one of R31 and R32 is independently selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, ii) n1 is one of integer numbers from 0 to 3, iii) n2 is one of integer numbers from 0 to 2, iv) m1 is one of integer numbers 0 and 1, v) a sum of n1, n2, and m1 is equal or greater than 1 (n1+n2+m1≧1), vi) l1 is one of integer numbers from 1 to 10, and vii) each one of R33 to R35 is hydrogen. 12. The composition of claim 11, wherein in the at least one of siloxane inorganic acid salts, at least one of hydrogen selected from the group consisting of R33 to R35 is substituted by a substituent expressed by a ninth formula: where one of R36 and R37 is a coupler to the eighth formula, ii) the others are independently selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, iii) each one of R33 to R35 is hydrogen or substituted by a substituent expressed by the ninth formula, iv) n3 is one of integer numbers from 0 to 3, v) n4 is one of integer numbers from 0 to 2, vi) m1 is one of integer numbers from 0 to 1, and vii) l1 is one of integer numbers from 1 to 10. 13. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising: a first inorganic acid;at least one of silane inorganic acid salts generated by reaction induced between a second inorganic acid and a first silane compound;a second silane compound; anda solvent,wherein the second inorganic acid is one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, a pyrophosphoric acid, a polyphosphoric acid, and a combination thereof,wherein the first silane compound and the second silane compound are one selected from the group consisting of compounds represented by a tenth formula, compounds represented by an eleventh formula, and a combination thereof,wherein the tenth formula is: and wherein the eleventh formula is: where i) each one of R1 to R10 is selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, ii) at least one of R1 to R4 is one of halogen and (C1-C10) alkoxy, iii) at least one of R5 to R10 is one of halogen and (C1-C10) alkoxy, and iv) n is one of integer numbers from 1 to 10, andwherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.