[미국특허]
Anti-ESD photomask and method of forming the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03F-001/40
H05F-001/02
출원번호
US-0419338
(2017-01-30)
등록번호
US-10126643
(2018-11-13)
발명자
/ 주소
Kung, Chun-Hung
Lai, Hao-Zhang
출원인 / 주소
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
대리인 / 주소
McClure, Qualey & Rodack, LLP
인용정보
피인용 횟수 :
0인용 특허 :
2
초록▼
The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is
The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.
대표청구항▼
1. A method of forming an anti-ESD photomask, the method comprising: providing a substrate;forming a light-shielding layer on a portion of the substrate, wherein the light-shielding layer comprises a Mo-containing layer; andperforming a surface treatment operation to convert a surface of the portion
1. A method of forming an anti-ESD photomask, the method comprising: providing a substrate;forming a light-shielding layer on a portion of the substrate, wherein the light-shielding layer comprises a Mo-containing layer; andperforming a surface treatment operation to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer. 2. The method of claim 1, wherein the substrate is transparent and comprises quartz, silicon, silicon carbide, calcium fluoride, silicon oxide-titanium oxide alloy or combinations thereof, and the Mo-containing layer comprises MoSi, MoSiON or a combination thereof. 3. The method of claim 1, wherein the Mo-containing layer comprises metallic Mo of a first atomic percentage, the non-conductive layer comprises metallic Mo of a second atomic percentage, and the second atomic percentage is less than the first atomic percentage. 4. The method of claim 1, wherein the non-conductive layer has a thickness in a range substantially from 1 nm to 3 nm. 5. The method of claim 1, wherein the surface treatment operation is performed using O2 plasma or N2 plasma. 6. The method of claim 1, wherein the light-shielding layer further comprises an opaque layer disposed on the Mo-containing layer and exposing a portion of the Mo-containing layer. 7. The method of claim 6, wherein the opaque layer comprises metallic chromium, chromium oxide, chromium nitride, chromium oxynitride, or combinations thereof. 8. A method of forming an anti-ESD photomask, the method comprising: providing a substrate;forming a light-shielding layer on a portion of the substrate, wherein the light-shielding layer comprises a Mo-containing layer; andforming a non-conductive layer directly on the light-shielding layer and the portion of the substrate. 9. The method of claim 8, wherein the substrate is transparent and comprises quartz, silicon, silicon carbide, calcium fluoride, silicon oxide-titanium oxide alloy or combinations thereof, and the Mo-containing layer comprises MoSi, MoSiON or a combination thereof. 10. The method of claim 8, wherein the non-conductive layer comprises SiO2, SiN, MoO2, MoN2, or a combination thereof. 11. The method of claim 8, wherein the non-conductive layer has a thickness in a range substantially from is 1 nm to 3 nm. 12. The method of claim 8, wherein forming the non-conductive layer directly on the light-shielding layer and the portion of the substrate comprises applying a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process or an atomic layer deposition (ALD) process to the light-shielding layer and the portion of the substrate. 13. The method of claim 8, wherein the light-shielding layer further comprises an opaque layer disposed on the Mo-containing layer and exposing a portion of the Mo-containing layer. 14. The method of claim 13, wherein the opaque layer comprises metallic chromium, chromium oxide, chromium nitride, chromium oxynitride, or combinations thereof. 15. An anti-ESD photomask, comprising: a substrate;a light-shielding layer disposed on a portion of the substrate, wherein the light-shielding layer comprises a Mo-containing layer; anda non-conductive layer disposed on the light-shielding layer and the portion of substrate. 16. The anti-ESD photomask of claim 15, wherein the Mo-containing layer comprises MoSi, MoSiON or a combination thereof. 17. The method of claim 15, wherein the Mo-containing layer comprises metallic Mo of a first atomic percentage, the non-conductive layer comprises metallic Mo of a second atomic percentage, and the second atomic percentage is less than the first atomic percentage. 18. The anti-ESD photomask of claim 15, wherein the non-conductive layer comprises SiO2, SiN, MoO2, MoN2, or a combination thereof. 19. The anti-ESD photomask of claim 15, wherein the non-conductive layer has a thickness in a range substantially from is 1 nm to 3 nm. 20. The anti-ESD photomask of claim 15, wherein the light-shielding layer further comprises a chromium-containing layer disposed on the Mo-containing layer and exposing a portion of the Mo-containing layer.
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