초록 ▼

- 인장강도 측정 국제비교용 기준물, 측정 프로토콜을 이용한 국제비교 실시
- 70, 120 MPa급 탄성계수 기준물, 불확도 절차서 이용한 국제비교 실시 (VAMAS TWA32)
- 경도(브리넬 경도 표준기 및 로크웰 경도 숙련도 시험) 및 나노압입 분야 측정표준 확립
- 리브 경도 주요 구성 요소의 측정 기술 및 표준 교정 절차 개발
- 105 MPa 수소환경 하 정적 강도 및 파괴인성 측정
- 금속용기 프로토 타입(수소가스 인프라) 신뢰성 측정 시스템 개발
- 수소 흡착/침투량/투과량 정밀측정

- 인장강도 측정 국제비교용 기준물, 측정 프로토콜을 이용한 국제비교 실시
- 70, 120 MPa급 탄성계수 기준물, 불확도 절차서 이용한 국제비교 실시 (VAMAS TWA32)
- 경도(브리넬 경도 표준기 및 로크웰 경도 숙련도 시험) 및 나노압입 분야 측정표준 확립
- 리브 경도 주요 구성 요소의 측정 기술 및 표준 교정 절차 개발
- 105 MPa 수소환경 하 정적 강도 및 파괴인성 측정
- 금속용기 프로토 타입(수소가스 인프라) 신뢰성 측정 시스템 개발
- 수소 흡착/침투량/투과량 정밀측정 분석 및 SIMS 기반 수소침투분포 측정
- MWCNT sheet 이용 전기적 수소 검출 및 반응속도 3 s 이하 고감도 수소센서 개발
- 전산란 데이터이용 단·장 범위의 원자배열 측정기술 개발
- PicoIndenter 나노역학물성 측정시스템/EPTP 모듈을 이용한 2차원 그래핀 인장시험 수행
- 박막두께 국제비교/표준보급 및 nm급 Ta₂O₅ 박막 두께 측정 기술 개발
- Si/Ge 다층박막 두께측정 및 CIGS 다원합금박막 정량분석 국제비교 (K-129) 실시
- 25 nm급 TiO₂ 분말 분산절차 및 SFNE(Surfactant Free Nano Emulsion) 제조기술 개발
- 노이즈 저항 절차서 등록 및 ISO 규격 FDIS 투표
- 면저항 CRM 4종 개발 및 APMP SC 수행
- 열전 나노선 전기 및 열전능 측정/예측기술 개발 및 열전변환효율지수 계산
- 저차원 나노소재 열전물성 측정평가 시스템 구축 및 MoS₂의 열적 특성 및 열전물성 계산
- Si(111) 표면 위의 다전자 양자점의 구현 및 전자구조/전기적 상호작용 측정
- 반도체 표면과 단면 물성의 STM/(S)TEM 복합 분석 기술 개발
- 극저온/고자기장 STM (상용) 설치 및 성능 평가
- O₂/Si(100)의 precursor 흡착 상태 측정 및 CO 흡착 특성 규명
- 화합물 반도체 나노선 성장제어 및 특성평가 기술 개발
- 에너지 소재의 결정, 전자, 화학 구조 측정분석 기술

Abstract ▼

Ⅳ. Results
- Establishment of world-class measurement capability on uniaxial tensile test at an ambient environment through international proficiency comparisons
- Measurements of smooth and notched tensile tests under 105 MPa gaseous hydrogen
- Measurement of fracture toughness and crack g

Ⅳ. Results
- Establishment of world-class measurement capability on uniaxial tensile test at an ambient environment through international proficiency comparisons
- Measurements of smooth and notched tensile tests under 105 MPa gaseous hydrogen
- Measurement of fracture toughness and crack growth behavior under 105 MPa gaseous hydrogen
- Establishment of optimum testing conditions and fracture toughness measuring technique using a small punch test under 10 MPa gaseous hydrogen
- Development of a robust chamber and monitoring system for measuring reliability of hydrogen components and tanks
- Measurement and prediction of internal defects and cracks of a tank using a pulsed eddy current
- Development of a hydrogen damage assessment system with a ultrasonic method and identification of creeping wave changes due to hydrogen-induced damages
- Formation of hydride-mixed reference materials less than 150 wppm level
- Separation of absorbed, reversible and trapped hydrogens through a continuous degassing method up to 900 ℃ (uncertainty 0.60 ppm in mole)
- Development of a hydrogen permeation cell and measurement of hydrogen permeation curve and hydrogen diffusion coefficient through STS 316 stainless steel at high temperatures (300, 350 ℃)
- Measurement of surface-local hydrogen distribution in hydrogen-exposed specimens (600 ℃/10 MPa gaseous hydrogen) through a secondary ion mass spectroscopy
- Fabrication of a Pd film coated sensor on CNT sheet
- Good response and sensing performance compared to commercial sensors under 1 % hydrogen concentration
- Sensor calibration for low hydrogen concentrations (0 ~ 10000 ppm) and development of a hydrogen monitoring program
- Development of surfactant free nano emulsion processing Apparatus
- Optimizing of surfactant free oil(olive) in water nano emulsion process
- Development of local structure measurement technique using laboratory X-ray sources
- Development of sample preparation methods of 1D and 2D nanomaterials for tensile testing
- Performing the tensile tests of 1D and 2D nanomaterials
- Fabrication of Ta₂O₅ thin films with thickness from 1.0 to 5.0 nm using ion-beam sputtering method
- Measurement of certified thickness and determination of electron attenuation length for nm-thick Ta₂O₅ thin films
- Establishment of equivalency of XRR film-thickness measurements
- Establishment of the procedure for noise resistance measurements
- Study of harmonic current measurement procedure
- Participation in the standardization of electrochemical noise techniques as a project leader in ISO.
- Completement of an supplementary comparison among KRISS, CMS/ITRI and NIM for sheet resistance CRMs in the range of 100 Ω/□, 1000 Ω/□ and 3000 Ω/□
- Key comparison for the establishment of traceability in the quantification of multi-element alloy films
- Development of international standard for the measurement of layer thickness of multilayer films by SIMS
- Design and realization of 6"-scale MEMS devices for all-in-one measurements of thermoelectric properties of nanowires
- Development of measurement technologies of thermoelectric energy conversion effieiency of nanowires (Bi₂Te₃, InAs )
- Development of measurement technologies of thermal conductivity of 2-dimensional nanocrystal (MoS₂)
- Non-equilibrium molecular dynamics and Boltzmann transport simulation for thermoelectric properties of low-dimensional nanomaterials
- Simulation of the effects of twin boundary defects on thermoelectric properties of Bi-Te based nanowires
- Simulation of thermal conductivities of Si, Si nanowires with size effects
- Simulation of thermal conductivities of 2D semiconductors
- Growth optimization of GaAs, InAs nanowire
- Structural defect analysis of GaAs nanowire by TEM
- Optical analysis of GaAs nanowire by PR
- Computational modeling on (In)GaAs crystal structure and GaAs phase transition
- Development of a reactive force field to describe the phase stability of GaAs wurtzite and zincblende
- Build-up of a low-temperature scanning tunneling microscope
- Establishment of the atom-resolved tunneling spectroscopy technique to probe the eigenstates and wavefunctions of atomic-scale QD structures at low temperatures under the external magnetic fields.
- Establishment of first-priciples calculations whose results can be compared to the atom-resolved tunneling spectroscopy measurements
- Development of the point defect generation technique by using a scanning tunneling microscopy
- Measurement of the electric and magnetic properties of single point defect on a silicon surface by using the atom-resolved tunneling spectroscopy
- First-principles simulations of the structural, electronic, and magnetic properties of single point defect on a silicon surface
- Measurement and evaluation of the memory effect of individual surface atoms of silicon by using a scanning tunneling microscopy
- Examination and assessment of the memory effect mechanism of individual surface atoms of silicon by using first-principles calculations