[보고서]차세대 영상기술을 위한 나노구조 원적외선/테라헤르쯔 검출소자

노삼규

보고서 정보

주관연구기관

한국표준과학연구원
Korea Research Institute of Standards and Science

연구책임자

노삼규

참여연구자

김창수 , 이상준 , 이승미 , 김준오 , 박동우 , Sanjay Krishna

보고서유형

최종보고서

발행국가

대한민국

언어

한국어

발행년월

2014-05

과제시작연도

2012

주관부처

미래창조과학부
Ministry of Science, ICT and Future Planning

등록번호

TRKO201800009712

과제고유번호

1345169729

사업명

글로벌연구실사업

DB 구축일자

2018-05-26

키워드

나노구조.양자점.응력 초격자.양자점 적외선검출소자.초격자 적외선검출소자.초점면배열 모듈.적외선 열영상.열영상 카메라 시스템.Nano structure.Quantum dot.Strained-layer superlattice.QDIP.SLIP.Focal-plane array module.Infrared image.Thermographic camera system.

DOI

https://doi.org/10.23000/TRKO201800009712

표 Electromagnetic wave spectrum and FIR/THz regime.
표 Type-I/type-II band alignment and direct/indirect transition scheme.
표 Comparison between visible images taken by optic camera and IR images taken by IR camera.
표 Blackbody radiation spectra and atmospheric windows for near/mid/far infrared (SWIR/MWIR/LWIR) regions.
표 Bandgap energy diagram showing material system for AlGaAs/GaAs QWIP, InAs/GaAs QDIP, and InAs/GaSb SLIP detector.
표 Experimental detectivities of QWIP, QDIP, DWELL, SLIP reported on journals.
표 Spectral emissivity curve following Planck
표 Comparison between visible and IR images taken by optic and IR cameras.
표 Transmission spectrum in air and 3 atmospheric windows (SW/MW/LW IR).
표 Bandgap energy diagram showing material system for (InGa)As/GaAs QDIP and (InGa)As/GaSb SLIP detectors.
표 Infrared FPA detector module flip-chip bonded with ROIC and layout of thermographic camera system.
표 Single- and multi-color (wavelength) infrared images.
표 THz gap in blackbody radiation spectrum.
표 THz images and fingerprint for applications to imaging and analyses.
표 Schematic diagram of (a) pulse and (b) cw THz generation/detection system.
표 Specification of pulse and cw THz generation system.
표 THz imaging system based on pulse THz generation.
표 Specification of fs pulse laser source for THz system.
표 THz antenna used for TDS measurement system.
표 Sub-ps/THz spectroscopy/imaging system set-up in KRISS.
표 Experimental setup for THz photomixer measurement.
표 THz antenna used for photomixer measurement system.
표 THz imaging system.
표 PL intensities of D[i/d]WELL-QDIPs with different layer structures and growth parameters.
표 PL spectra (300 K) of various DWELL-QDIPs and transition model.
표 PR spectra for (i) VLW, (ii) LW, (iii) MW corresponding to sublevel transitions in CB of DWELL-QDIP.
표 Bias dependent PR spectra for I-DWELL InAs/GaAs QDIP.
표 Responsivity and detectivity taken under reverse bias of 3.0 V as a function of temperature.
표 DdWELL-QDIP (P=30) device.
표 I-V characteristic curves of dark current measured at temperatures of 13-300 K for MIR DdWELL-QDIP.
표 Temperature dependence of dark current and its Arrhenius plot of MIR DdWELL-QDIP (V=-3.6 V).
표 Spectral responsivity of MIR DdWELL-QDIP measured at 13 K under reverse bias of 2.6-5.0 V.
표 PL spectra of DBDW-QDIP fitted by 3 Gaussian curves.
표 Schematic energy-band diagram of active region of MIR dDWELL-QDIP.
표 I-V characteristic curve for test device (300 μmϕ) of MIR dDWELL-QDIP.
표 PR spectra taken at FFT and static mode.
표 R values at 77 K for 3 test devices and a FPA pixel.
표 InGaAs/GaAs DWELL QDIP coupled with [AlGaAs/ GaAs]-DBR.
표 Normalized reflectivity of (AlGaAs-oxide)/ GaAs-DBR structure.
표 Normalized reflectivity of DBR-coupled DWELL-QDIP structure.
표 JDC-V curves for dark current from QDIPs with and without DBR.
표 JPC-V curves for photocurrent from QDIPs with and without DBR.
표 Spectral photoresponse curves DWELL-QDIPs with and without DBR.
표 Responsivity (9.5 μm) taken from DWELL-QDIPs with/without DBR.
표 Detectivity (9.5 μm) taken from DWELL-QDIPs with/without DBR.
표 Photoresponse spectra of RT (5.0-nm well)-coupled DWELL-QDIP.
표 Photoresponse spectra of RT (5.5-nm well)-coupled DWELL-QDIP.
표 Photoresponse spectra of RT (5.5-nm well)-coupled DWELL-QDIP.
표 PR spectra of DdWELL-QDIP measured under (a) forward and (b) reverse biases.
표 Electric field (bias voltage) dependences of PR peak wavelengths of DdWELL-QDIP.
표 (a) Wavefunctions and sublevels numerically calculated for forward (blue) and reverse (red) biased asymmetric double QW, and comparative curves between experimental data (open squares) and calculated [EW1 → EW2] transition energy (solid circles) as a fucntion of electric field.
표 Design of single device and layout of [6x6] array pixel.
표 Photomask for individual single device.
표 SEM images of etched mesas of InAs/GaAs QDIP and GaSb SLIP.
표 I-V characteristics for Pd/Ge/Au/ Pt/Au on n-GaSb.
표 PL spectrum (300 K) taken from QD active layer of QDIP.
표 Schematic views of SPC FPA-QDIP fabrication showing unit processes.
표 SEM images for SPC hole array and In-bump array.
표 SEM images of PR (a) and SPC (b) patterns formed by using IL.
표 Schematic views of plasmonic field formed at interface of SPC/QDIP.
표 SPC coupler structure and simulated plasmonic field distribution formed at interface of SPC/QDIP.
표 Simulated resonant wavelengthsas a function of pitch in SPC.
표 Plasmonic field distributions for λ1,0 and λ1,1 modes.
표 Transmission spectra simulated and measured for Au SPC structure.
표 Spectral response curves for FPA-QDIP (a) without and (b) with SPC.
표 Layer structure and energy-band diagram (a) of QDIP, schematic diagram of SP-coupled FPA-QDIP (b), z-component SP field (c), and SPC structure (d) integrated on FPA-QDIP.
표 Simulated absorption of SPC and experimental PR pectra for FPA-QDIP.
표 Comparative images for filter assembly and human hand with no filter (left) and filtered images below/at/above resonance (right) taken by FPA-QDIP with and without SPC.
표 Wavelength selective images taken by SPC-QDIP and band-pass filters
표 Measured values of Vs/Vn as a function of wavelength.
표 Test setup for spectral response.
표 Test setup for FPA radiometerics.
표 (a) PL spectra taken from 4 BWL and 2 AWL samples and (b) power-dependent PL spectra for 1.5-ML sample
표 (a) PL peak energies and (b) intensity ratios as a function of InAs-QD coverage
표 PL peak energies and intensity ratios for SQDs, CQDs, and WLs observed in 6 different QD samples with the coverage of BWL and AWL
표 AFM and TEM images of (a)SK-QD and (b) QML-QD.
표 STEM images of 5 stacked SML-QD (0.3 ML).
표 EDS spot analysis of 5 stacked SML-QD (0.3 ML).
표 Layer structure of n-i-n (a) SML-QDIP and (b) SK-QDIP devices
표 (a) 10-K PL spectra and (b) plots of PL peak energy/FWHMW as a fuctnion of number of SML-QD stacks.
표 (a) 300-K PL spectra and (b) plots of PL peak energy/FWHMW as a fuctnion of number of SML-QD stacks.
표 Power dependent PL spectra for (a) SK-QD and (b) SML-QD (S=4)
표 Excitation power dependence of PL intensities for SK-QD and SML-QD (S=4).
표 Photographs for major FPA process.
표 Thinning/FPA-ROIC bonding process.
표 IR image system and [320x256]-FPA SML-QDIP chip.
표 Thermal images taken by [320x256]-FPA (a) SML-QDIP and SK-QDIP.
표 Sb-MBE growth chamber modified by Sb-VCC and As-VCC.
표 PL spectra and energy band diagram of GaSb epilayers and substrate.
표 PL spectra normalized to peak A and (b) integral PL intensity plotted as a function of growth temperature.
표 Schematic energy-band diagram (20 K) of GaSb epilayer and intrinsic defect states.
표 Hall mobility plotted as a function of carrier concentration of GaSb epilayers.
표 Integral PL intensity plotted as as function of carrier concentration of Be-doped p-GaSb epilayers.
표 Energy band diagram showing Be-related level in p-GaSb:Be.
표 Measured (a) carrier concentration and (b) Hall mobility of 3 homoepitaxial p-GaSb layers with low-,mid-, high-DD plotted as a function of injection current at 77 K and 300 K.
표 300-K Hall parameters corrected by estimated built-in potential/depletion width and measured ones with no correction in parenthesis.
표 Growth modes with GI indtroduced between InAs and GaSb layer growths.
표 GI dependence of HR-XRD curves and 0th-peak separation angles.
표 (a) HR-XRD spectra and (b) 0-PSA taken from [InAs/GaSb]-SLS grown at different soaking mode.
표 (a) HR-XRD spectra and (b) 0-PSA taken from [InAs/GaSb]-SLS grown at different As soak time.
표 (a) HR-XRD spectra and (b) 0-PSA taken from [InAs/GaSb]-SLS grown at different Sb soak time.
표 Comparative plot for As, Sb and As-Sb co-soak.
표 HR-TEM images (left) and stress distributions (right) of 8/8-ML InAs/GaSb]-SLS (P=50).
표 Energy band diagram and bandgap in InAs.
표 Dielectric function and absorption of InAs.
표 Strain (Δa/a) plotted as a function of total thickness of single period of [InAs/GaSb]-SLS.
표 Real (ε1, upper) and imaginary (ε2, lower) dielectric functions measured from [InAs/GaSb]-SLS with different thickness of InAs.
표 Lattice constant (ao) and energy gap (EG) of unstrained bulk InAs and GaSb calculated by DFT methodology and their experimental values.
표 Bandgap energy calculated for [InAs/GaSb]-SLS.
표 Energy ban structure of unstrained bulk InAs calculated by DFT methodology.
표 Energy band structure of unstrained bulk GaSb calculated by DFT methodology.
표 Energy band structure of strained InAs calculated by DFT methodology.
표 Supercell of 4/4-ML, 8/8-ML, and 13/7-ML [InAs/GaSb]-SLS.
표 Energy band structure and density of states (DOS) of 4/4-ML [InAs/GaSb]-SLS calculated by DFT.
표 Schematic diagrams for device and energy band of n-B-n [InAs/GaSb]-SLIP.
표 Layer and device structures of n-B-n dual-band [InAs/GaSb]-SLIP.
표 TEM image of [InAs/GaSb]-SLIP and top view of single device.
표 MIR-PR spectra at (a) 77 K and (b) 300 K of dual-band SLIP device.
표 Equivalent energy band diagrams under forward (left) and reverse (right) biases in n-B-n SLIP device.
표 MIR- and FIR-PR spectra taken from dual-band SLIP device under reverse and forward biases at 77 K.
표 Transition energies of MIR/FIR-SLS in InAs/GaSb ([8/8]/[13/7]-ML) dual-band n-B-n SLIP device.
표 Absorption edge energy for HH1-C transition in MIR-SLS plotted as a function of temperature that follows the Varshni empirical equation and temperature-dependence of MW-PR spectra (inset).
표 Schematic energy band diagram showing transition in MIR/FIR -SLS of InAs/GaSb ([8/8]/[13/7]-ML) dual-band n-B-n SLIP.
표 E–k energy-band diagram of [10/10]-ML [InAs/GaSb]-SLS calculated with modified bond-orbital model (MBOM). by C.-N. Chen.
표 [320x256]-FPA SLIP showing single pixel, chip, and processed wafer.
표 Lab-scale thermographic camera system.
표 PR spectra measured from test device of [320x256]-FPA SLIP.
표 Schematic diagram for pulse THz generation.
표 Schematic diagram for continuous-wave THz generation by dual-wavelength LD.
표 THz spectra in (a) time domain and (b) frequency domain.
표 Comparison between outputs of LTG-GaAs and LTG-InGaAs THz detectors
표 Photomask layout of Tx/Rx devices.
표 Design of transmission line and dipole antenna structures for Tx/Rx.
표 THz-TDS system (KMU).
표 THz generation characteristics of SI-GaAs with Ti/Au and Ti/Al antenna
표 Bias dependent THz generation of SI-GaAs with different EPDs
표 Bias dependence of THz generation characteristics in HTG-InGaAs.
표 Pattern dependence of THz generation characteristics in HTG-InGaAs.
표 Input power dependence of THz generation characteristics in HTG-InGaAs.
표 THz current of HTG-InGaAs plotted as a function of laser power.
표 Surface TEM and AFM images for as-grown and in-situ annealed samples.
표 Surface TEM image for ex-situ annealed LTG-InGaAs.
표 List of samples used for THz characterization and photomixer device.
표 Experimental setup of fs pump-probe spectroscopy for lifetime measurement.
표 Decay curves for carrier lifetime analysis.
표 Carrier lifetime decay curves for various LTG-GaAs samples.
표 Time-domain THz spectra of LTG-InGaAs emitters.
표 Fourier-transformed THz spectra of LTG-InGaAs emitters.
표 THz detection characteristics of LTG-GaAs and LTG-InGaAs.
표 Input power dependence of THz detection characteristics of LTG-InGaAs
표 THz detection current of LTG-InGaAs as a function of Rx input power
표 TEM image of InGaAs/InAlAs MQW (P=25) annealed at 600 ˚C.
표 SIMS depth profile of InGaAs/InAlAs MQW (P=25) structure.
표 PL spectra of HT-MQW (P=25/50) and LT-InGaAs epilayer.
표 fs decay curve showing carrier lifetime taken from HT-MQW (P=25).
표 THz generation characteristics of HTG-MQW.
표 THz detection characteristics of HTG-MQW with different period.
표 (a) Period dependence of (a) p-p current and (b) spectral amplitude in HTG-MQW.
표 THz detection characteristics of HTG-MQW.
표 Schematic structure of layer and antenna for THz-PD.
표 Schematic of THz generation/detection using dual-mode LD.
표 Bow-tie antenna and photomixer module chips.
표 THz output power of LTG-InGaAs based photomixer plotted as a function of beat frequency.
표 Hall results of LTG-InGaAs layers as a function of Be doping level.
표 Decay curve of LTG-InGaAs emitter of THz photomixer.
표 Frequency tuning characteristics of THz emission from LTG-InGaAs photomixer and THz waveforms of 0.315/0.99 THz (inserts)
표 Layout of antenna structure and photomixer chip.
표 Chip-chip bonding of photomixer chip and AlN substrate.
표 Fiber-coupled photomixer module.
표 Transmitter and antenna module of THz imaging system (Fig. 1-21).
표 Comparison between MRI and THz images for human brain.
표 THz images of internal organs.
표 THz image of red blood.

과제명(ProjectTitle) :	-
연구책임자(Manager) :	-
과제기간(DetailSeriesProject) :	-
총연구비 (DetailSeriesProject) :	-
키워드(keyword) :	-
과제수행기간(LeadAgency) :	-
연구목표(Goal) :	-
연구내용(Abstract) :	-
기대효과(Effect) :	-

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차세대 영상기술을 위한 나노구조 원적외선/테라헤르쯔 검출소자
Nanostructure FIR/THz Detectors for Next-generation Imaging Technology 원문보기

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