최근 반도체 소자의 고속화 및 고 직접화에 따라 배선층수의 증가와 패턴의 미세화에 따른 요구가 갈수록 높아져 CMP에 대한 관심이 높아지고 있다. 하지만, CMP공정 후 결과들은 사용되는 장비, 소모재, 그리고 공정변수에 따라 많은 차이를 보이고 있다. 따라서 본 논문에서는 압력(pressure), 정반의 회전속도(plate speed), ...
최근 반도체 소자의 고속화 및 고 직접화에 따라 배선층수의 증가와 패턴의 미세화에 따른 요구가 갈수록 높아져 CMP에 대한 관심이 높아지고 있다. 하지만, CMP공정 후 결과들은 사용되는 장비, 소모재, 그리고 공정변수에 따라 많은 차이를 보이고 있다. 따라서 본 논문에서는 압력(pressure), 정반의 회전속도(plate speed), 슬러리 분사량(slurry flowrate) 등에 따른 연마율과 연마균일도의 변화를 관찰하고 가장 안정적인 공정조건을 찾고, 또한 질화막이 없는 산화막 패턴을 사용하여 시간에 따른 연마형태와 연마정지점 부근에서의 연마 특성을 관찰하고 메카니즘을 제시함으로써 차세대 ULSI 소자 적용을 위한 최적화된 CMP 연구분야의 기술로 활용하고자 한다.
최근 반도체 소자의 고속화 및 고 직접화에 따라 배선층수의 증가와 패턴의 미세화에 따른 요구가 갈수록 높아져 CMP에 대한 관심이 높아지고 있다. 하지만, CMP공정 후 결과들은 사용되는 장비, 소모재, 그리고 공정변수에 따라 많은 차이를 보이고 있다. 따라서 본 논문에서는 압력(pressure), 정반의 회전속도(plate speed), 슬러리 분사량(slurry flow rate) 등에 따른 연마율과 연마균일도의 변화를 관찰하고 가장 안정적인 공정조건을 찾고, 또한 질화막이 없는 산화막 패턴을 사용하여 시간에 따른 연마형태와 연마정지점 부근에서의 연마 특성을 관찰하고 메카니즘을 제시함으로써 차세대 ULSI 소자 적용을 위한 최적화된 CMP 연구분야의 기술로 활용하고자 한다.
As device geometry continues to shrink and become more complex, and circuit size is reduced to the deep sub-micron region, chemical mechanical planarization(CMP) has become essential for semiconductor device technology. In particular, the CMP process can achieve complete global planarization. Howeve...
As device geometry continues to shrink and become more complex, and circuit size is reduced to the deep sub-micron region, chemical mechanical planarization(CMP) has become essential for semiconductor device technology. In particular, the CMP process can achieve complete global planarization. However, the results vary according to the CMP equipment used, consumables and processing parameters. Therefore, it is very important to determine the optimum processing conditions. In this paper, the variation of removal rate and non-uniformity in blanket wafer with respect to plate and head speed, slurry flow rate, down force and added amounts of additive has been investigated using slurry B. The removal rate of blanket wafer was measured using nanospec ATF/4150. The removal characteristics and surface morphology of the pattern wafer were measured by α-step, nanospec ATF/4150 and atomic force microscope(AFM), while the cross sections of patterned wafers were observed by FESEM images using three different ceria abrasive sizes. Using these results, we compared the variables in these experiments and obtained optimum process conditions at 60 rpm plate speed, 50 rpm head speed, 7 psi down force and 60 ml/min slurry flow rate. It was observed that the with-in-wafer-non-uniformity(WIWNU) was less than 4 % for the optimized processing condition. The removal rate and selectivity of oxide and nitride film were decreased according to the amount of additive added. The most selectivity was obtained at 20 wt.%. The dependence of step height reduction of patterned wafer on polishing time showed non-linear behavior in all tested slurries.
As device geometry continues to shrink and become more complex, and circuit size is reduced to the deep sub-micron region, chemical mechanical planarization(CMP) has become essential for semiconductor device technology. In particular, the CMP process can achieve complete global planarization. However, the results vary according to the CMP equipment used, consumables and processing parameters. Therefore, it is very important to determine the optimum processing conditions. In this paper, the variation of removal rate and non-uniformity in blanket wafer with respect to plate and head speed, slurry flow rate, down force and added amounts of additive has been investigated using slurry B. The removal rate of blanket wafer was measured using nanospec ATF/4150. The removal characteristics and surface morphology of the pattern wafer were measured by α-step, nanospec ATF/4150 and atomic force microscope(AFM), while the cross sections of patterned wafers were observed by FESEM images using three different ceria abrasive sizes. Using these results, we compared the variables in these experiments and obtained optimum process conditions at 60 rpm plate speed, 50 rpm head speed, 7 psi down force and 60 ml/min slurry flow rate. It was observed that the with-in-wafer-non-uniformity(WIWNU) was less than 4 % for the optimized processing condition. The removal rate and selectivity of oxide and nitride film were decreased according to the amount of additive added. The most selectivity was obtained at 20 wt.%. The dependence of step height reduction of patterned wafer on polishing time showed non-linear behavior in all tested slurries.
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