고품질의 투명전극으로 사용되는 ITO는 우수한 전기ㆍ광학적 특성으로 인해 PDP, LCD, OLED, 태양전지 등에 널리 사용되고 있다. 하지만 ITO는 저온공정의 어려움과 ITO의 원료 물질인 In의 수급이 불안정하여 원자재의 가격이 높고, 수소 ...
고품질의 투명전극으로 사용되는 ITO는 우수한 전기ㆍ광학적 특성으로 인해 PDP, LCD, OLED, 태양전지 등에 널리 사용되고 있다. 하지만 ITO는 저온공정의 어려움과 ITO의 원료 물질인 In의 수급이 불안정하여 원자재의 가격이 높고, 수소 플라즈마에 노출 시 열화로 인한 광학적 특성의 변화가 문제점으로 지적되어 대체 재료에 대한 필요성이 급격히 증대되고 있다. 이러한 문제점을 보완할 수 있는 새로운 재료 개발로 본 연구에서는 RF 마그네트론 스퍼터링법을 이용하여 Al-doped ZnO(ZnO:Al) 대체 투명전극을 제작한 결과 2×10^(-3)[Ωㆍ㎝]의 비저항과 평균 85% 이상의 광투과율을 나타내었다. 본 논문에서는 ZnO:Al 박막의 단점으로 지적되고 있는 전기적 안정성에 대한 연구에 대해서 가속열화실험을 통해 문제점을 보완할 수 있는 전기분해법으로 특성을 향상시켰다. 그 결과 기존의 ZnO:Al 표면 산화에 따른 전기ㆍ광학적 특성이 기존의 연구된 XZO계 박막이 가지고 있는 결과에 비해 최대 약 5배의 높은 전기적 안정성을 확보 할 수 있었다. ZnO:Al 박막이 투명전극으로서의 응용가능성을 평가하기 위해 차세대 디스플레이 소자로 각광받고 있는 유기발광다이오드(OLED) 제작하였다. 또한 ITO를 투명전극으로 사용한 유기발광다이오드 특성을 비교하여 전압에 따른 휘도특성 및 전류밀도에 대한 휘도 특성이 상대적으로 우수하였다. 이러한 결과들은 고수명, 저가격의 ZnO:Al 박막이 투명전극으로서 디스플레이 산업에 적용이 가능함을 의미한다.
고품질의 투명전극으로 사용되는 ITO는 우수한 전기ㆍ광학적 특성으로 인해 PDP, LCD, OLED, 태양전지 등에 널리 사용되고 있다. 하지만 ITO는 저온공정의 어려움과 ITO의 원료 물질인 In의 수급이 불안정하여 원자재의 가격이 높고, 수소 플라즈마에 노출 시 열화로 인한 광학적 특성의 변화가 문제점으로 지적되어 대체 재료에 대한 필요성이 급격히 증대되고 있다. 이러한 문제점을 보완할 수 있는 새로운 재료 개발로 본 연구에서는 RF 마그네트론 스퍼터링법을 이용하여 Al-doped ZnO(ZnO:Al) 대체 투명전극을 제작한 결과 2×10^(-3)[Ωㆍ㎝]의 비저항과 평균 85% 이상의 광투과율을 나타내었다. 본 논문에서는 ZnO:Al 박막의 단점으로 지적되고 있는 전기적 안정성에 대한 연구에 대해서 가속열화실험을 통해 문제점을 보완할 수 있는 전기분해법으로 특성을 향상시켰다. 그 결과 기존의 ZnO:Al 표면 산화에 따른 전기ㆍ광학적 특성이 기존의 연구된 XZO계 박막이 가지고 있는 결과에 비해 최대 약 5배의 높은 전기적 안정성을 확보 할 수 있었다. ZnO:Al 박막이 투명전극으로서의 응용가능성을 평가하기 위해 차세대 디스플레이 소자로 각광받고 있는 유기발광다이오드(OLED) 제작하였다. 또한 ITO를 투명전극으로 사용한 유기발광다이오드 특성을 비교하여 전압에 따른 휘도특성 및 전류밀도에 대한 휘도 특성이 상대적으로 우수하였다. 이러한 결과들은 고수명, 저가격의 ZnO:Al 박막이 투명전극으로서 디스플레이 산업에 적용이 가능함을 의미한다.
Due to their advantageous properties, such as relatively inexpensive costs and stability of resources, XZO-type materials for transparent electrodes are being actively studied for commercialization over ITO thin films. However, the materials still suffer demerits such as failing to remain the electr...
Due to their advantageous properties, such as relatively inexpensive costs and stability of resources, XZO-type materials for transparent electrodes are being actively studied for commercialization over ITO thin films. However, the materials still suffer demerits such as failing to remain the electrical properties during the change of time in atmosphere under room temperature, or failing to have chemical stability. Such demerits are delaying the actual commercialization. We studied the stability of the electrical and optical properties of ZnO:Al thin films at various annealing temperature. The film was prepared by RF magnetron sputtering and annealing was followed by the box furnace at the air atmosphere. The electrical resistance of ZnO:Al thin films were decreased with increasing annealing temperature. Annealing at over 350℃ resulted in a resistance shift from 100Ω/sq to 0.1MΩ/sq. Also the behavior of resistance change at various annealing temperature was investigated in order to confirm the mechanism of resistance drop. Analysis of these samples by XPS and XRD revealed the decrease of resistance is due to the oxygen adsorption and lower binding energy of Zn2p3/2. on ZnO:Al thin films at high temperature annealing condition. Characteristics of hole mobility of these samples were examined by the means of hall measurement. The results show that the hole mobility were 22㎠/Vs at RT condition 4.98㎠/Vs at 400℃ condition respectively. The change of mobility was also explained by Van der Pauw method. To resolve this problem, an electrolysis process was added, and as a result, improvements were made on ZnO:Al thin films. According to the condition of electrolysis process, an assessment was made on the temperature range with the most drastic change in electric change in electric resistance. The result showed about 300 minutes increase in life times. In order to apply to anode for OLED device. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode. The change in work-function following the processing time of electrolysis was applied to the fabrication process of device. After checking for light emitting, current density-voltage (J-V) and voltage-brightness (V-L) were measured. The result showed a maximum brightness of 2300cd/m2 at 11V. Also, the change of work-function value following the UV irradiation time for the processing time of electrolysis was improved to 4.4∼5.14.
Due to their advantageous properties, such as relatively inexpensive costs and stability of resources, XZO-type materials for transparent electrodes are being actively studied for commercialization over ITO thin films. However, the materials still suffer demerits such as failing to remain the electrical properties during the change of time in atmosphere under room temperature, or failing to have chemical stability. Such demerits are delaying the actual commercialization. We studied the stability of the electrical and optical properties of ZnO:Al thin films at various annealing temperature. The film was prepared by RF magnetron sputtering and annealing was followed by the box furnace at the air atmosphere. The electrical resistance of ZnO:Al thin films were decreased with increasing annealing temperature. Annealing at over 350℃ resulted in a resistance shift from 100Ω/sq to 0.1MΩ/sq. Also the behavior of resistance change at various annealing temperature was investigated in order to confirm the mechanism of resistance drop. Analysis of these samples by XPS and XRD revealed the decrease of resistance is due to the oxygen adsorption and lower binding energy of Zn2p3/2. on ZnO:Al thin films at high temperature annealing condition. Characteristics of hole mobility of these samples were examined by the means of hall measurement. The results show that the hole mobility were 22㎠/Vs at RT condition 4.98㎠/Vs at 400℃ condition respectively. The change of mobility was also explained by Van der Pauw method. To resolve this problem, an electrolysis process was added, and as a result, improvements were made on ZnO:Al thin films. According to the condition of electrolysis process, an assessment was made on the temperature range with the most drastic change in electric change in electric resistance. The result showed about 300 minutes increase in life times. In order to apply to anode for OLED device. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode. The change in work-function following the processing time of electrolysis was applied to the fabrication process of device. After checking for light emitting, current density-voltage (J-V) and voltage-brightness (V-L) were measured. The result showed a maximum brightness of 2300cd/m2 at 11V. Also, the change of work-function value following the UV irradiation time for the processing time of electrolysis was improved to 4.4∼5.14.
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