Abstract ▼ AI-Helper

For application of TFT-LCD, we have studied the deposition of a-Si:H(hydrogenated amorphous silicon) films and the growth of gate oxide films on a-Si:H films to produce a-Si:H TFT(thin film transistor) using the 27.5kHz pulsed microwave power electron cyclorton resonance (ECR) plasma system without ...

For application of TFT-LCD, we have studied the deposition of a-Si:H(hydrogenated amorphous silicon) films and the growth of gate oxide films on a-Si:H films to produce a-Si:H TFT(thin film transistor) using the 27.5kHz pulsed microwave power electron cyclorton resonance (ECR) plasma system without intentionally heating. In the case of a-Si:H films, it is found that the pulse change the total hydrogen content, its bonding configuration, substrate temperature, optical properties. The optical properties such as the refractive index(n), the optical energy band gap(E_g) are 5.3 and 1.73eV respectively. And the absorption coefficient( a ) is 5×10/cm and 1×10^(4)/cm at photon energies of 1.5eV and 2.0eV. Using the present method, better quality a-Si:H films have been obtained as compared to those obtained by the conventional ECR PECVD(plasma enhanced chamical vapor deposition) method and the RF(radio friquency) PECVD method at 250-300'C. In the case of gate oxide films, it is gained the thickness of about 135A, the surface Rms roughness of about 3.3A, the refractive index of about 1.45 when it is grown for 40min, at 300W of microwave power and at 30sccm of O_(2) flow rate. FTIR data shows aharp peaks of Si-O_(2) bonding indicaiting the formation of SiO_(2). As a result, high quality oxide films with properties that are better than that of deposited SiO_(2) films by RF PECVD above 250℃ can be grown without intentional heating.