Micro-fabrication techniques have received much attention in recent years because of the trend towards miniaturization and fine pitch in the industrial and technological applications required to produce semiconductor, communication, display products and electronics components in the field of precisi...
Micro-fabrication techniques have received much attention in recent years because of the trend towards miniaturization and fine pitch in the industrial and technological applications required to produce semiconductor, communication, display products and electronics components in the field of precision engineering. In particular, the electronics industry uses the wet etching techniques to micro-fabricate semiconductors, lead frames, tape substrate, photo mask and ball grid arrays. Recently, many studies have attempted to improve the wet etching technologies for the micro-electronics industry. Tape substrates and lead frame are a key component of the semiconductor IC. These function as substrate of supporting platforms for chips and electrical connections between semiconductor chips and printed circuit boards. The etching and PR coating process are the most important in the wet etching processes and spray etching technology has been applied to the productions of package device IC. Extremely small features can be obtained and the dimensions can be controlled precisely. The quality and productivity of device IC are determined by the etching characteristics. The etching performance would depend on the etching system, etchant, characteristics of the metal substrate and etching conditions. The objective of this study is to provide information on the improvement of etching characteristics for fabrication of fine pitch of device IC. In this study, the etching mechanisms were investigated under different etching parameters. The etching and spray characteristics were investigated under different conditions. The correlations between etching characteristics and spray characteristics were analyzed using statistical methods. Furthermore, the etching characteristics were simulated with etching system conditions. The etching experiments were performed with different etching parameters such as injection pressure, distance from nozzle tip, etchant temperature and nozzle geometry. The spray characteristics were measured by using Phase Doppler Anemometer (PDA). The modeling of spray characteristics was performed by the Monte-Carlo method and the etching characteristics was simulated with etching system. Also the behaviors and structures of droplet molecules on the different shape of substrate and were investigated and analyzed by molecular dynamics. The Lennard-Jones potential was applied to mono-atomic molecules of argon as the liquid cluster and platinum as the nano-structure substrate. The average axial velocity and impact force were increased with the spray pressure but the average SMD was decreased. For a nozzle oscillated between 20° and -20°, the pattern was quite similar to a normal distribution and the depth of etching increased linearly. The etching rate was higher in the cases of the high etchant temperature, the high injection pressure. The etching characteristics had good positive correlation with impact force. The coefficients of determination (R2) between the etching factor and impact force was 0.833, respectively. The spray characteristics were not significantly influenced by the swirl-chamber aspect ratio. The etching performance factors have interrelation with the spray characteristics, and we can predict to the accuracy and the productivity of manufactures by the control of spray characteristics. The spray distribution simulated using a Monte-Carlo technique increased with the distance from the nozzle tip increased. At the same time, the drop number per unit cell decreased. The simulated results agreed well with the measured spray characteristics. The uniformity at spray pressure of 0.3 MPa and feed speed of 1m/s was highest. The behavior of liquid cluster on various nano-structure substrates depend on the interface wettability and interaction force factors, such as, attraction and repulsion, on the surface. It was found that the optimum value of interaction force factors α and β are 0.14 and 0.7. There is a possibility of getting the structure which is dense from low temperature in the surface temperature. CR* value according to change of temperature gets an influence at the respective structure of substrate. The temperature of droplet and substrate were increased as the spreading ratio was increased. The average and max spreading ratio were 0.7754 and 0.4707, respectively. The surface temperature is important the factor that is control the porosity. From these results, it was found that the fine etching performance of device IC could be fabricated by applying the spray technology to wet etching and obtaining the optimal condition for improvement of etching performance by the simulation.
Micro-fabrication techniques have received much attention in recent years because of the trend towards miniaturization and fine pitch in the industrial and technological applications required to produce semiconductor, communication, display products and electronics components in the field of precision engineering. In particular, the electronics industry uses the wet etching techniques to micro-fabricate semiconductors, lead frames, tape substrate, photo mask and ball grid arrays. Recently, many studies have attempted to improve the wet etching technologies for the micro-electronics industry. Tape substrates and lead frame are a key component of the semiconductor IC. These function as substrate of supporting platforms for chips and electrical connections between semiconductor chips and printed circuit boards. The etching and PR coating process are the most important in the wet etching processes and spray etching technology has been applied to the productions of package device IC. Extremely small features can be obtained and the dimensions can be controlled precisely. The quality and productivity of device IC are determined by the etching characteristics. The etching performance would depend on the etching system, etchant, characteristics of the metal substrate and etching conditions. The objective of this study is to provide information on the improvement of etching characteristics for fabrication of fine pitch of device IC. In this study, the etching mechanisms were investigated under different etching parameters. The etching and spray characteristics were investigated under different conditions. The correlations between etching characteristics and spray characteristics were analyzed using statistical methods. Furthermore, the etching characteristics were simulated with etching system conditions. The etching experiments were performed with different etching parameters such as injection pressure, distance from nozzle tip, etchant temperature and nozzle geometry. The spray characteristics were measured by using Phase Doppler Anemometer (PDA). The modeling of spray characteristics was performed by the Monte-Carlo method and the etching characteristics was simulated with etching system. Also the behaviors and structures of droplet molecules on the different shape of substrate and were investigated and analyzed by molecular dynamics. The Lennard-Jones potential was applied to mono-atomic molecules of argon as the liquid cluster and platinum as the nano-structure substrate. The average axial velocity and impact force were increased with the spray pressure but the average SMD was decreased. For a nozzle oscillated between 20° and -20°, the pattern was quite similar to a normal distribution and the depth of etching increased linearly. The etching rate was higher in the cases of the high etchant temperature, the high injection pressure. The etching characteristics had good positive correlation with impact force. The coefficients of determination (R2) between the etching factor and impact force was 0.833, respectively. The spray characteristics were not significantly influenced by the swirl-chamber aspect ratio. The etching performance factors have interrelation with the spray characteristics, and we can predict to the accuracy and the productivity of manufactures by the control of spray characteristics. The spray distribution simulated using a Monte-Carlo technique increased with the distance from the nozzle tip increased. At the same time, the drop number per unit cell decreased. The simulated results agreed well with the measured spray characteristics. The uniformity at spray pressure of 0.3 MPa and feed speed of 1m/s was highest. The behavior of liquid cluster on various nano-structure substrates depend on the interface wettability and interaction force factors, such as, attraction and repulsion, on the surface. It was found that the optimum value of interaction force factors α and β are 0.14 and 0.7. There is a possibility of getting the structure which is dense from low temperature in the surface temperature. CR* value according to change of temperature gets an influence at the respective structure of substrate. The temperature of droplet and substrate were increased as the spreading ratio was increased. The average and max spreading ratio were 0.7754 and 0.4707, respectively. The surface temperature is important the factor that is control the porosity. From these results, it was found that the fine etching performance of device IC could be fabricated by applying the spray technology to wet etching and obtaining the optimal condition for improvement of etching performance by the simulation.
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