초음파 의료 영상 응용 분야를 위한 고전압 고집적 아날로그 front-end 집적회로를 0.18-µm 표준 CMOS 반도체 공정을 이용하여 구현하였다. 제안 된 아날로그 front-end 집적회로는 2.6 MHz에서 15 Vp-p 전압까지 동작하는 트랜지스터 stacking 구조를 이용한 고전압 펄서와, 저전압에서 동작하는 저잡음 transimpedance 증폭기, 그리고 송신부와 수신부의 분리를 위한 고전압 차단 스위치로 구성되어 있다. ...
초음파 의료 영상 응용 분야를 위한 고전압 고집적 아날로그 front-end 집적회로를 0.18-µm 표준 CMOS 반도체 공정을 이용하여 구현하였다. 제안 된 아날로그 front-end 집적회로는 2.6 MHz에서 15 Vp-p 전압까지 동작하는 트랜지스터 stacking 구조를 이용한 고전압 펄서와, 저전압에서 동작하는 저잡음 transimpedance 증폭기, 그리고 송신부와 수신부의 분리를 위한 고전압 차단 스위치로 구성되어 있다. 저잡음 증폭기의 경우에는 94-dBΩ의 이득, 20 MHz의 동작 대역폭, 그리고 3.9 pA/√Hz 의 잡음 성능을 갖고 있으며, 1.1V의 전압에서 동작이 가능하다. 고전압 차단 스위치의 경우에도 송신부의 펄서와 마찬가지로 저전압 트랜지스터만을 이용하여 설계가 되었다. 구현 된 집적회로는 0.15 mm² 이하의 작은 면적을 사용함으로써 휴대용 영상 시스템을 포함한 다중 어레이 초음파 의료 영상 시스템에 적용이 가능하다.
초음파 의료 영상 응용 분야를 위한 고전압 고집적 아날로그 front-end 집적회로를 0.18-µm 표준 CMOS 반도체 공정을 이용하여 구현하였다. 제안 된 아날로그 front-end 집적회로는 2.6 MHz에서 15 Vp-p 전압까지 동작하는 트랜지스터 stacking 구조를 이용한 고전압 펄서와, 저전압에서 동작하는 저잡음 transimpedance 증폭기, 그리고 송신부와 수신부의 분리를 위한 고전압 차단 스위치로 구성되어 있다. 저잡음 증폭기의 경우에는 94-dBΩ의 이득, 20 MHz의 동작 대역폭, 그리고 3.9 pA/√Hz 의 잡음 성능을 갖고 있으며, 1.1V의 전압에서 동작이 가능하다. 고전압 차단 스위치의 경우에도 송신부의 펄서와 마찬가지로 저전압 트랜지스터만을 이용하여 설계가 되었다. 구현 된 집적회로는 0.15 mm² 이하의 작은 면적을 사용함으로써 휴대용 영상 시스템을 포함한 다중 어레이 초음파 의료 영상 시스템에 적용이 가능하다.
Today, medical imaging has become a standard procedure during a medical examination. As the safety, fast, and low-cost imaging solution, ultrasound medical imaging gain a big benefit from the current and future trends while opposing other imaging modalities. Typical analog front-end (AFE) IC used to...
Today, medical imaging has become a standard procedure during a medical examination. As the safety, fast, and low-cost imaging solution, ultrasound medical imaging gain a big benefit from the current and future trends while opposing other imaging modalities. Typical analog front-end (AFE) IC used to interface the ultrasound transducer is comprised of transmit and receive circuitry, where high-voltage transistors are utilized by the transmit circuitry while the receive circuitry is designed by using low-voltage transistors. Designing transmit and receive circuitry into a single element of AFE IC by only using low-voltage transistors (standard CMOS technology) while provides high reliability in transmit and receive performance is the biggest challenge in this work. Dynamically-biased stacked transistors are proposed by using low-voltage transistors in order to obtain a low-cost and compact high-voltage circuitry design without compromising the performance. Meanwhile transimpedance amplifier with psudo-resistor feedback biased on an optimal transconductance condition is applied on the receive circuitry to gain low input-referred noise, with forward body biased as well to minimize the power consumption. A switch which utilized similar approach to the transmit circuitry is added between transmit and receive circuitry in purpose to isolate the low-voltage receive circuitry from the high-voltage transmit circuitry during the ultrasound transducer transmit period. During the integration test, the chip has been working correctly where the transmit circuitry can transmit the HV pulse and the switch can isolate the receive circuitry. Otherwise, at receive period the transmit circuitry is turned-OFF while the switch is passing the received current signal from ultrasound transducer to the receive circuitry to be amplified without any significant loss and degradation in noise performance. Therefore, a highly-integrated AFE IC with dynamically-biased stacked transistor can be utilized as an effective, reliable, and low-cost solution for the future of various multi-array ultrasound medical imaging systems.
Today, medical imaging has become a standard procedure during a medical examination. As the safety, fast, and low-cost imaging solution, ultrasound medical imaging gain a big benefit from the current and future trends while opposing other imaging modalities. Typical analog front-end (AFE) IC used to interface the ultrasound transducer is comprised of transmit and receive circuitry, where high-voltage transistors are utilized by the transmit circuitry while the receive circuitry is designed by using low-voltage transistors. Designing transmit and receive circuitry into a single element of AFE IC by only using low-voltage transistors (standard CMOS technology) while provides high reliability in transmit and receive performance is the biggest challenge in this work. Dynamically-biased stacked transistors are proposed by using low-voltage transistors in order to obtain a low-cost and compact high-voltage circuitry design without compromising the performance. Meanwhile transimpedance amplifier with psudo-resistor feedback biased on an optimal transconductance condition is applied on the receive circuitry to gain low input-referred noise, with forward body biased as well to minimize the power consumption. A switch which utilized similar approach to the transmit circuitry is added between transmit and receive circuitry in purpose to isolate the low-voltage receive circuitry from the high-voltage transmit circuitry during the ultrasound transducer transmit period. During the integration test, the chip has been working correctly where the transmit circuitry can transmit the HV pulse and the switch can isolate the receive circuitry. Otherwise, at receive period the transmit circuitry is turned-OFF while the switch is passing the received current signal from ultrasound transducer to the receive circuitry to be amplified without any significant loss and degradation in noise performance. Therefore, a highly-integrated AFE IC with dynamically-biased stacked transistor can be utilized as an effective, reliable, and low-cost solution for the future of various multi-array ultrasound medical imaging systems.
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