CMP process in semiconductor process technology for planarization of the wafer surface as one of the representative process, many studies are being carried out. However, the CMP process is mechanical and chemical element consisting of a fairly complex, so, it is difficult to explain the CMP process ...
CMP process in semiconductor process technology for planarization of the wafer surface as one of the representative process, many studies are being carried out. However, the CMP process is mechanical and chemical element consisting of a fairly complex, so, it is difficult to explain the CMP process by the one element. For this reason, in this study, by using multiple sensors to monitor CMP processes.
Distinguishing the signal can be occurred in the CMP process, this range of sensors for detecting is also selected. Use the selected sensors, multi-monitoring system.
In order to monitoring for CMP process, we selected sensors in order to obtain a frequency-domain signal as the current sensor, the friction force sensor, current sensor for low-frequency signals to detect selected, and AE sensor to detect high-frequency signals. Frictional force sensor is to detect middle-frequency signals.
In chapter 5, signal analysis was carried out in the change of CMP process conditions and consumable items. CMP process signals that occur during the fair will present various types of signals, depending on the argument. Therefore, multi-sensor monitoring system allows a frequency range of each attribute to the time domain and the frequency domain.
Experimental results in the time domain signal analysis based on the change in speed, the friction force is the most advantage. Frequency domain, the current sensor is the most advantage, and AE sensor is the most disadvantaged.
The pressure changes in the time domain signal analysis based on frictional force, the most beneficial, but AE sensor is difficult to detect the signal. However, it was difficult to apply all three sensors in the frequency domain.
In signal analysis based on the type of STI wafers and Cu wafer. In the time domain, AE sensor was the most beneficial to detect changes of STI thin film and then friction force sensor. Current sensor was difficult. In the frequency domain, AE sensor was the most beneficial to detect changes of STI thin film, but signal is a mixture of frequencies by adding other attributes, the more study was necessary. In the case of Cu, in the time domain of friction sensor is the most beneficial, and AE sensor was next. It is possible to detecting signal changes in the sensitivity of thin film, but impossible to distinguish current sensor signal. AE signals in the frequency domain characteristics indicate a frequency, but processing was judged by the frequency, friction over the scope and the application of current sensor was judged to be difficult.
In a change of consumables, detect the signal for characterization of slurry. Three kinds of slurry was selected. As a result, current sensor and friction sensor were unclear in the time and frequency domain. However, in the case of AE sensor time domain, the distinction is unclear. But in the frequency domain due to the characteristics of the frequency of different types of slurry were able to confirm that. So according to the type of slurry, AE sensors was determined to be the most useful.
In chapter 5, we explained the CMP EPD. Research status of polishing EPD technology that are being described, and STI and Cu endpoint detection were attempted.
In STI CMP, according to the time as a polishing to check the status of surface, and at the same time, an analysis of multiple-sensor signals, it is too early to determine for the EPD, AE sensor was the most useful. As in the case of Cu CMP, according to the time as a polishing to check the status of surface, and at the same time, an analysis of multiple-sensor signals, it is too early to determine for the EPD, friction sensor was the most useful. As a result of the above through the CMP process monitoring application of multi-sensor monitoring system to check the process. However, the wafers are larger and width can go smaller and consumable items, at the present time a study on CMP process monitoring is ongoing. This research monitored through CMP process monitoring technology for moving one step further.
CMP process in semiconductor process technology for planarization of the wafer surface as one of the representative process, many studies are being carried out. However, the CMP process is mechanical and chemical element consisting of a fairly complex, so, it is difficult to explain the CMP process by the one element. For this reason, in this study, by using multiple sensors to monitor CMP processes.
Distinguishing the signal can be occurred in the CMP process, this range of sensors for detecting is also selected. Use the selected sensors, multi-monitoring system.
In order to monitoring for CMP process, we selected sensors in order to obtain a frequency-domain signal as the current sensor, the friction force sensor, current sensor for low-frequency signals to detect selected, and AE sensor to detect high-frequency signals. Frictional force sensor is to detect middle-frequency signals.
In chapter 5, signal analysis was carried out in the change of CMP process conditions and consumable items. CMP process signals that occur during the fair will present various types of signals, depending on the argument. Therefore, multi-sensor monitoring system allows a frequency range of each attribute to the time domain and the frequency domain.
Experimental results in the time domain signal analysis based on the change in speed, the friction force is the most advantage. Frequency domain, the current sensor is the most advantage, and AE sensor is the most disadvantaged.
The pressure changes in the time domain signal analysis based on frictional force, the most beneficial, but AE sensor is difficult to detect the signal. However, it was difficult to apply all three sensors in the frequency domain.
In signal analysis based on the type of STI wafers and Cu wafer. In the time domain, AE sensor was the most beneficial to detect changes of STI thin film and then friction force sensor. Current sensor was difficult. In the frequency domain, AE sensor was the most beneficial to detect changes of STI thin film, but signal is a mixture of frequencies by adding other attributes, the more study was necessary. In the case of Cu, in the time domain of friction sensor is the most beneficial, and AE sensor was next. It is possible to detecting signal changes in the sensitivity of thin film, but impossible to distinguish current sensor signal. AE signals in the frequency domain characteristics indicate a frequency, but processing was judged by the frequency, friction over the scope and the application of current sensor was judged to be difficult.
In a change of consumables, detect the signal for characterization of slurry. Three kinds of slurry was selected. As a result, current sensor and friction sensor were unclear in the time and frequency domain. However, in the case of AE sensor time domain, the distinction is unclear. But in the frequency domain due to the characteristics of the frequency of different types of slurry were able to confirm that. So according to the type of slurry, AE sensors was determined to be the most useful.
In chapter 5, we explained the CMP EPD. Research status of polishing EPD technology that are being described, and STI and Cu endpoint detection were attempted.
In STI CMP, according to the time as a polishing to check the status of surface, and at the same time, an analysis of multiple-sensor signals, it is too early to determine for the EPD, AE sensor was the most useful. As in the case of Cu CMP, according to the time as a polishing to check the status of surface, and at the same time, an analysis of multiple-sensor signals, it is too early to determine for the EPD, friction sensor was the most useful. As a result of the above through the CMP process monitoring application of multi-sensor monitoring system to check the process. However, the wafers are larger and width can go smaller and consumable items, at the present time a study on CMP process monitoring is ongoing. This research monitored through CMP process monitoring technology for moving one step further.
주제어
#CMP monitoring multi sensor AE current friction
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