본 논문에서는 TCO투명전극재료로 가장많이 사용되는 ITO의 대체 물질로 Ga-Doped ZnO을 이용하여 광전소자의 투명전극으로 활용이 가능한 RF Magnetron Sputtering System을 이용하여 다양한 공정 조건에서 GZO ...
본 논문에서는 TCO투명전극재료로 가장많이 사용되는 ITO의 대체 물질로 Ga-Doped ZnO을 이용하여 광전소자의 투명전극으로 활용이 가능한 RF Magnetron Sputtering System을 이용하여 다양한 공정 조건에서 GZO 박막의 분석을 실시하였다.
GZO 박막의 구조적 특성을 분석하기 위해서 X-Ray Diffractometer을 이용하여 박막의 결정 구조 및 결정립 크기등 공정조건에 따른 구조적 특성을 분석하였다. 또한 광학적 특성을 보기위해 UV-Visble 스펙트럼 분석을 하였으며, 박막의 캐리어 농도, 비저항, 이동도등 Hall 측정을 통하여 전기적 특성을 분석하였다. 박막의 공정별 전기적 특성 변화의 원인 분석을 위해 X-선 광전자 분광기를 이용하여 공정별 박막의 결합 구성 성분 및 화학 결합의 형태를 알아보았다.
가 포함되지 않는 Ar 유량 변화에 따른 GZO 투명 전도 산화막은 공정조건에서의 모든 박막이 85 % 이상의 높은 투과율을 나타냈고, 비정질 구조를 나타났으며, 전하의 농도가 낮은 곳에서 홀 이동도가 증가하였고, 산소공공과 전하농도와는 비례하는 관계가 나타났다. 따라서 비정질의 구조에서 이동도를 증가시키기 위해서는 전하의 농도와 산소공공의 양이 낮아야 한다는 것을 알 수 있었다.
유량 변화에 대한 공정에서는 열처리 온도와 상관없이 모든 박막이 85 % 이상의 높은 투과율을 나타냈으며, 열처리 온도에 따라 박막의 결정성과 이동도가 증가함을 알 수 있었다. 비정질 구조의 GZO 박막의 경우 낮은 비저항 높은 이동도 높은 투과율로 전극 층 소자로 적용되기에 적합성을 나타났다. 본 연구를 통하여 GZO 박막이 TCO에 가장 많이 쓰이는 ITO의 대체 물질로 우수한 투명 전도 산화물임을 확인 할 수 있었다.
본 논문에서는 TCO 투명전극재료로 가장많이 사용되는 ITO의 대체 물질로 Ga-Doped ZnO을 이용하여 광전소자의 투명전극으로 활용이 가능한 RF Magnetron Sputtering System을 이용하여 다양한 공정 조건에서 GZO 박막의 분석을 실시하였다.
GZO 박막의 구조적 특성을 분석하기 위해서 X-Ray Diffractometer을 이용하여 박막의 결정 구조 및 결정립 크기등 공정조건에 따른 구조적 특성을 분석하였다. 또한 광학적 특성을 보기위해 UV-Visble 스펙트럼 분석을 하였으며, 박막의 캐리어 농도, 비저항, 이동도등 Hall 측정을 통하여 전기적 특성을 분석하였다. 박막의 공정별 전기적 특성 변화의 원인 분석을 위해 X-선 광전자 분광기를 이용하여 공정별 박막의 결합 구성 성분 및 화학 결합의 형태를 알아보았다.
가 포함되지 않는 Ar 유량 변화에 따른 GZO 투명 전도 산화막은 공정조건에서의 모든 박막이 85 % 이상의 높은 투과율을 나타냈고, 비정질 구조를 나타났으며, 전하의 농도가 낮은 곳에서 홀 이동도가 증가하였고, 산소공공과 전하농도와는 비례하는 관계가 나타났다. 따라서 비정질의 구조에서 이동도를 증가시키기 위해서는 전하의 농도와 산소공공의 양이 낮아야 한다는 것을 알 수 있었다.
유량 변화에 대한 공정에서는 열처리 온도와 상관없이 모든 박막이 85 % 이상의 높은 투과율을 나타냈으며, 열처리 온도에 따라 박막의 결정성과 이동도가 증가함을 알 수 있었다. 비정질 구조의 GZO 박막의 경우 낮은 비저항 높은 이동도 높은 투과율로 전극 층 소자로 적용되기에 적합성을 나타났다. 본 연구를 통하여 GZO 박막이 TCO에 가장 많이 쓰이는 ITO의 대체 물질로 우수한 투명 전도 산화물임을 확인 할 수 있었다.
The study examined characteristics of a thin film through the use of RF Magnetron sputtering according to various process factors of GZO thin film and sorted out research on correlations between carrier concentration and oxygen bore. Experiments were divided into three. They included experiments on ...
The study examined characteristics of a thin film through the use of RF Magnetron sputtering according to various process factors of GZO thin film and sorted out research on correlations between carrier concentration and oxygen bore. Experiments were divided into three. They included experiments on characteristics of GZO thin film according to gas flux, changes in O2 flux and heat treatment temperature.
As for GZO thin film according to Ar gas flux, amorphous characteristics were found in all thin films, and mobility was the highest by recording 5cm2/V-1S-1 15 sccm, and it was the lowest by showing non-resistance or posting 3.46×10-3Ωcm.
The most excellent amorphous characteristics of GZO thin film were indirectly predicted based on measuring data on holes at 15 sccm. As for the carrier concentration, there were no correlations with mobility and non-resistance, and as a result of data on distribution of oxygen holes as measured by XPS, it was confirmed that the carrier concentration changes according to distribution of oxygen holes. To put it simply, amorphous GZO thin film raises amorphous degree of thin films in order to increase electric characteristics in case of amorphous GZO.
As for GZO thin films according to changes in O2 flux, peak (002) was confirmed in all thin films to substantiate crystallinity of GZO thin films. As a result of FWHM, it turned out that crystallinity of thin films was expanded according to increase in O2 influx, and the more increased crystallinity of thin films, the more increased mobility.
As for non-resistance value, the higher mobility, the lower non-resistance quality. As a result of XPS measurement, the carrier concentration turned out to indicate proportional relationships with oxygen holes. As for mobility of thin films, the more increased quantity of Ga dopant, the more increased mobility.
As for GZO thin films according to heat treatment temperature, (002) peak was confirmed in all thin films, and data showed that electronic characteristics and crystallinity of thin films, which indicates clearer differences after RT and heat treatment become improved. However, it turned out that the crystallinity of thin films is deteriorated in heat treatment at 400 degrees and that the mobility of thin films was reduced, and as non-resistance value was drastically increased in heat treatment at 400 degrees, the crystallinity of thin films was reduced, and it resulted in decreased mobility of thin films. However, it is considered to have been caused not by faulty crystalinity but by increased resistance of thin films. Increased resistance of thin films stems from reduced electronic charge concentration, and the electronic charge concentration is proportionate to value of oxygen holes of thin films. Reduced concentration originates from increased electrovalence on the back of raised temperature, which eventually results in gradual disappearance of ions generated in the course of evaporation. For this reason, FWHM becomes smaller and the crystallinity grow larger, but mobility turns out to be reduced.
The study examined characteristics of a thin film through the use of RF Magnetron sputtering according to various process factors of GZO thin film and sorted out research on correlations between carrier concentration and oxygen bore. Experiments were divided into three. They included experiments on characteristics of GZO thin film according to gas flux, changes in O2 flux and heat treatment temperature.
As for GZO thin film according to Ar gas flux, amorphous characteristics were found in all thin films, and mobility was the highest by recording 5cm2/V-1S-1 15 sccm, and it was the lowest by showing non-resistance or posting 3.46×10-3Ωcm.
The most excellent amorphous characteristics of GZO thin film were indirectly predicted based on measuring data on holes at 15 sccm. As for the carrier concentration, there were no correlations with mobility and non-resistance, and as a result of data on distribution of oxygen holes as measured by XPS, it was confirmed that the carrier concentration changes according to distribution of oxygen holes. To put it simply, amorphous GZO thin film raises amorphous degree of thin films in order to increase electric characteristics in case of amorphous GZO.
As for GZO thin films according to changes in O2 flux, peak (002) was confirmed in all thin films to substantiate crystallinity of GZO thin films. As a result of FWHM, it turned out that crystallinity of thin films was expanded according to increase in O2 influx, and the more increased crystallinity of thin films, the more increased mobility.
As for non-resistance value, the higher mobility, the lower non-resistance quality. As a result of XPS measurement, the carrier concentration turned out to indicate proportional relationships with oxygen holes. As for mobility of thin films, the more increased quantity of Ga dopant, the more increased mobility.
As for GZO thin films according to heat treatment temperature, (002) peak was confirmed in all thin films, and data showed that electronic characteristics and crystallinity of thin films, which indicates clearer differences after RT and heat treatment become improved. However, it turned out that the crystallinity of thin films is deteriorated in heat treatment at 400 degrees and that the mobility of thin films was reduced, and as non-resistance value was drastically increased in heat treatment at 400 degrees, the crystallinity of thin films was reduced, and it resulted in decreased mobility of thin films. However, it is considered to have been caused not by faulty crystalinity but by increased resistance of thin films. Increased resistance of thin films stems from reduced electronic charge concentration, and the electronic charge concentration is proportionate to value of oxygen holes of thin films. Reduced concentration originates from increased electrovalence on the back of raised temperature, which eventually results in gradual disappearance of ions generated in the course of evaporation. For this reason, FWHM becomes smaller and the crystallinity grow larger, but mobility turns out to be reduced.
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