A sputter target is a material that is used to create thin films in a technique known as sputter deposition, or thin film deposition. During this process the sputter target material, which begins as a solid, is broken up by gaseous ions into tiny particles that form a spray and coat another ma...
A sputter target is a material that is used to create thin films in a technique known as sputter deposition, or thin film deposition. During this process the sputter target material, which begins as a solid, is broken up by gaseous ions into tiny particles that form a spray and coat another material, which is known as the substrate. Sputter deposition is commonly involved in the creation of semiconductors and magnetic recording media application. As a result, most sputter target materials are metallic elements or alloys, although there are some ceramic targets available that create hardened thin coatings for various tools.
Sputter target materials can be made to divided into two processes, which are liquid metallurgy process and powder metallurgy process.
In this study, Al, Cu, Al-Si-Cu and Cu-Mn targets were fabricated using the powder metallurgy process (spark plasma sintering process, SPS) for metal sputter target applications. Powders for sintering of Al and Cu compacts were prepared by reference powders of LTS company(USA). Al-Si-Cu and Cu-Mn alloy compacts were prepared using the gas atomizing process from Al, Si, Cu and Mn ingots. Each fabricated SPSed-compacts were investigated with the XRD, microstructure, relative density. Also, SPSed-compacts and reference target were fabricated by sputtering system and after that, fabricated thin films were investigated.
The main results obtained from this study are as follows.
For fabrication of the gas atomized Al-Si-Cu and Cu-Mn alloy powders, optimized processing conditions, such as melting temperature, orifice size, gas pressure and during time, were controlled during the gas atomizing processing. Al-Si-Cu and Cu-Mn optimized process condition of melting temperature, gas pressure and during time was 1000℃, 15 bar, 20 min and 1200℃, 12 bar, 30 min, respectively. Purity and average particle size of fabricated and atomized Al-Si-Cu and Cu-Mn alloy powders were 99.99%, 9.69 ㎛ and 99.992%, 20.56 ㎛, respectively.
Al, Cu, Al-Si-Cu and Cu-Mn compacts were fabricated by 1,000A spark plasma sintering machine. As the sintering pressure and heating rate is increasing, it causes high relative density and fine microstructures were observed. Al and Al-Si-Cu compacts optimized sintering conditions of temperature, heating rate and sintering pressure were 400℃, 80 ℃/min and 60 MPa, respectively. Cu and Cu-Mn compacts optimized sintering conditions of temperature, heating rate and sintering pressure were 850℃, 80 ℃/min and 60 MPa, respectively. Grain size and relative density of Al, Cu, Al-Si-Cu and Cu-Mn compacts were 14.8 ㎛, 100%, 8.38 ㎛, 100%, 5.1 ㎛, 100% and 22.1 ㎛, 100%, respectively.
Al, Cu, Al-Si-Cu and Cu-Mn compacts proceed with experiment about temperature gradient by 30,000A spark plasma sintering machine which is 100 mm in diameter. Applying to optimized sintering process, the temperature difference between the center and the edge of Al and Al-Si-Cu was 11℃, Cu and Cu-Mn was 13℃.
Al, Cu, Al-Si-Cu and Cu-Mn sputter targets were fabricated by temperature graduation sintering profiles which is 200 mm in diameter and 6.35 mm thickness. Relative density and grain size of fabricated on SPSed-Al, Cu, Al-Si-Cu and Cu-Mn sputter target were 99.75%, 20.7 ㎛, 99.75%, 5.43㎛, 99.45%, 4.8 ㎛ and 99.15%, 22.54 ㎛, respectively.
A sputter target is a material that is used to create thin films in a technique known as sputter deposition, or thin film deposition. During this process the sputter target material, which begins as a solid, is broken up by gaseous ions into tiny particles that form a spray and coat another material, which is known as the substrate. Sputter deposition is commonly involved in the creation of semiconductors and magnetic recording media application. As a result, most sputter target materials are metallic elements or alloys, although there are some ceramic targets available that create hardened thin coatings for various tools.
Sputter target materials can be made to divided into two processes, which are liquid metallurgy process and powder metallurgy process.
In this study, Al, Cu, Al-Si-Cu and Cu-Mn targets were fabricated using the powder metallurgy process (spark plasma sintering process, SPS) for metal sputter target applications. Powders for sintering of Al and Cu compacts were prepared by reference powders of LTS company(USA). Al-Si-Cu and Cu-Mn alloy compacts were prepared using the gas atomizing process from Al, Si, Cu and Mn ingots. Each fabricated SPSed-compacts were investigated with the XRD, microstructure, relative density. Also, SPSed-compacts and reference target were fabricated by sputtering system and after that, fabricated thin films were investigated.
The main results obtained from this study are as follows.
For fabrication of the gas atomized Al-Si-Cu and Cu-Mn alloy powders, optimized processing conditions, such as melting temperature, orifice size, gas pressure and during time, were controlled during the gas atomizing processing. Al-Si-Cu and Cu-Mn optimized process condition of melting temperature, gas pressure and during time was 1000℃, 15 bar, 20 min and 1200℃, 12 bar, 30 min, respectively. Purity and average particle size of fabricated and atomized Al-Si-Cu and Cu-Mn alloy powders were 99.99%, 9.69 ㎛ and 99.992%, 20.56 ㎛, respectively.
Al, Cu, Al-Si-Cu and Cu-Mn compacts were fabricated by 1,000A spark plasma sintering machine. As the sintering pressure and heating rate is increasing, it causes high relative density and fine microstructures were observed. Al and Al-Si-Cu compacts optimized sintering conditions of temperature, heating rate and sintering pressure were 400℃, 80 ℃/min and 60 MPa, respectively. Cu and Cu-Mn compacts optimized sintering conditions of temperature, heating rate and sintering pressure were 850℃, 80 ℃/min and 60 MPa, respectively. Grain size and relative density of Al, Cu, Al-Si-Cu and Cu-Mn compacts were 14.8 ㎛, 100%, 8.38 ㎛, 100%, 5.1 ㎛, 100% and 22.1 ㎛, 100%, respectively.
Al, Cu, Al-Si-Cu and Cu-Mn compacts proceed with experiment about temperature gradient by 30,000A spark plasma sintering machine which is 100 mm in diameter. Applying to optimized sintering process, the temperature difference between the center and the edge of Al and Al-Si-Cu was 11℃, Cu and Cu-Mn was 13℃.
Al, Cu, Al-Si-Cu and Cu-Mn sputter targets were fabricated by temperature graduation sintering profiles which is 200 mm in diameter and 6.35 mm thickness. Relative density and grain size of fabricated on SPSed-Al, Cu, Al-Si-Cu and Cu-Mn sputter target were 99.75%, 20.7 ㎛, 99.75%, 5.43㎛, 99.45%, 4.8 ㎛ and 99.15%, 22.54 ㎛, respectively.
주제어
#스퍼터링 타겟 Cu Al Al-Si-Cu Cu-Mn 방전플라즈마소결법
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