본 연구에서는 hydroxy styrene(HS)과 Ethyl cyclohexylmethacrylate (EHM) 공중합체를 가역적인 첨가 분열 사슬 이동 라디칼 중합법(Reversible addition-fragmentation chain transfer, ...
본 연구에서는 hydroxy styrene(HS)과 Ethyl cyclohexylmethacrylate (EHM) 공중합체를 가역적인 첨가 분열 사슬 이동 라디칼 중합법(Reversible addition-fragmentation chain transfer, RAFT) 으로 합성하여 EUV 포토레지스트로 패터닝을 했을 때 나타나는 확률적인 결함을 최소화 하고자 하였다. 리빙 특성이 유지되는 RAFT 조건을 확립하기 위해서 CTA의 구조, 온도, 개시제의 농도, CTA의 농도 조건을 달리하며 중합 시간에 따른 전환율(ln(M]0/[M])을 측정하여 속도론적 실험을 진행하였다. HS는 hydroxy 작용기로 인한 라디칼 안정성으로 바로 중합이 어렵기 때문에 전구체인 acetoxy styrene(ACS) 을 이용하여 EHM과 공중합 하였고 이를 ACS 부분만 선택적으로 가수분해하였고 H-NMR, C-NMR 과 FT-IR로 작용기가 변한 것을 확인하여 가수분해가 이루어졌음을 확인 할 수 있었다. 말단의 CTA 부분은 가수분해 되면서 thiol이 생기게 되는데 산으로 작용하여 반도체 후속 공정에 영향을 줄 것으로 판단되어 thiol capping 반응도 진행되었다. Poly(HS-co-EHM)은 포토레지스트로 만들어져 EUV 패터닝을 하였고 결과를 확인하였다. 해당 공중합체는 서로 다른 3가지의 분자량으로 중합되어 결과를 비교했는데, 분자량이 크면 확률적인 결함이 증가하고 노광 에너지도 높아지는 것을 확인하였다.
본 연구에서는 hydroxy styrene(HS)과 Ethyl cyclohexylmethacrylate (EHM) 공중합체를 가역적인 첨가 분열 사슬 이동 라디칼 중합법(Reversible addition-fragmentation chain transfer, RAFT) 으로 합성하여 EUV 포토레지스트로 패터닝을 했을 때 나타나는 확률적인 결함을 최소화 하고자 하였다. 리빙 특성이 유지되는 RAFT 조건을 확립하기 위해서 CTA의 구조, 온도, 개시제의 농도, CTA의 농도 조건을 달리하며 중합 시간에 따른 전환율(ln(M]0/[M])을 측정하여 속도론적 실험을 진행하였다. HS는 hydroxy 작용기로 인한 라디칼 안정성으로 바로 중합이 어렵기 때문에 전구체인 acetoxy styrene(ACS) 을 이용하여 EHM과 공중합 하였고 이를 ACS 부분만 선택적으로 가수분해하였고 H-NMR, C-NMR 과 FT-IR로 작용기가 변한 것을 확인하여 가수분해가 이루어졌음을 확인 할 수 있었다. 말단의 CTA 부분은 가수분해 되면서 thiol이 생기게 되는데 산으로 작용하여 반도체 후속 공정에 영향을 줄 것으로 판단되어 thiol capping 반응도 진행되었다. Poly(HS-co-EHM)은 포토레지스트로 만들어져 EUV 패터닝을 하였고 결과를 확인하였다. 해당 공중합체는 서로 다른 3가지의 분자량으로 중합되어 결과를 비교했는데, 분자량이 크면 확률적인 결함이 증가하고 노광 에너지도 높아지는 것을 확인하였다.
In this study, hydroxy styrene (HS) and Ethyl cyclohexylmethacrylate(EHM) copolymers were synthesized by reversible addition-fragmentation chain transfer(RAFT) and patterned with EUV photoresist. We tried to minimize defects. In order to establish RAFT conditions that maintain living characteristics...
In this study, hydroxy styrene (HS) and Ethyl cyclohexylmethacrylate(EHM) copolymers were synthesized by reversible addition-fragmentation chain transfer(RAFT) and patterned with EUV photoresist. We tried to minimize defects. In order to establish RAFT conditions that maintain living characteristics, a kinetic experiment by measuring the conversion rate(ln(M)0/[M]) according to polymerization time by varying the CTA structure, temperature, initiator concentration, and CTA concentration conditions. HS was copolymerized with EHM using acetoxy styrene(ACS), a precursor, because it was difficult to polymerize immediately due to radical stability due to hydroxy functional groups, and only the ACS portion was selectively hydrolyzed. The fucntional group was confirming by 1H-NMR, 13C-NMR and FT-IR that hydrolysis was performed. As a result, thiol was produced, but it was determined that it would affect the subsequent semiconductor process by acting as an acid, so that the thiol capping reaction was also carried out. As a result of comparing the results by polymerizing the copolymer with three different molecular weights, it was confirmed that the probability defect increased and the exposure energy increased when the molecular weight was large.
In this study, hydroxy styrene (HS) and Ethyl cyclohexylmethacrylate(EHM) copolymers were synthesized by reversible addition-fragmentation chain transfer(RAFT) and patterned with EUV photoresist. We tried to minimize defects. In order to establish RAFT conditions that maintain living characteristics, a kinetic experiment by measuring the conversion rate(ln(M)0/[M]) according to polymerization time by varying the CTA structure, temperature, initiator concentration, and CTA concentration conditions. HS was copolymerized with EHM using acetoxy styrene(ACS), a precursor, because it was difficult to polymerize immediately due to radical stability due to hydroxy functional groups, and only the ACS portion was selectively hydrolyzed. The fucntional group was confirming by 1H-NMR, 13C-NMR and FT-IR that hydrolysis was performed. As a result, thiol was produced, but it was determined that it would affect the subsequent semiconductor process by acting as an acid, so that the thiol capping reaction was also carried out. As a result of comparing the results by polymerizing the copolymer with three different molecular weights, it was confirmed that the probability defect increased and the exposure energy increased when the molecular weight was large.
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