초록

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Abstract ▼ AI-Helper

In this paper, the Poisson's equation is solved two-dimensionally without employing any fitting parameters, and the model formulation of a short-channel MOSFET is accomplished fully analytically. It automatically derives a very accurate drain current expression that can be used simultaneously for st...

In this paper, the Poisson's equation is solved two-dimensionally without employing any fitting parameters, and the model formulation of a short-channel MOSFET is accomplished fully analytically. It automatically derives a very accurate drain current expression that can be used simultaneously for strong inversion, subthreshold, and saturation regions. Furthermore, this model gives a unified explanation for the short-channel effect, the body effect, the DIBL effect, and even the variation of the effective carrier mobility. The obtained expression of the threshold voltage also includes the dependence on the oxide thickness, the n+ junction depth, and temperature.