초록

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Abstract ▼ AI-Helper

We have observed anisotropic anodisation process for porous silicon formation. The starting material was (100) silicon $n/n^{+}/n$ wafer structured by $n^{+}$-diffusion on n-type substrate and by subsequent n-epitaxial growth. After the top n-silicon epitaxial layer was etched ...

We have observed anisotropic anodisation process for porous silicon formation. The starting material was (100) silicon $n/n^{+}/n$ wafer structured by $n^{+}$-diffusion on n-type substrate and by subsequent n-epitaxial growth. After the top n-silicon epitaxial layer was etched to open the porous silicon layer(PSL) anodisation window, anodisation takes place only to $n^{+}$-buried layer. The process of porous silicon formation on (100) sample was anisotropic, which was evident from that the shapes of the reacted porous silicon layer was all squarelike regardless of the shapes of reaction windows. The experimental results show that the PSL anodisation process does not depend on chemical reaction but does on electrical conduction property, which is hole mobility depending on the crystal direction.