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Abstract ▼ AI-Helper

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$....

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.