초록

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Abstract ▼ AI-Helper

We experimented on the sub 50nm patterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, firstly, we reduced the PR thickness to 100nm, and the field size to 200 ${um}m$. Then PEB ...

We experimented on the sub 50nm patterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, firstly, we reduced the PR thickness to 100nm, and the field size to 200 ${um}m$. Then PEB (Post Expose Bake) time/temperature, which is one of the very important factors when SAL601 is used, were reduced for minimum line width. In addition, digitizing is optimized for better results. Quantum wire and quantum dot which can be used for nanoscale memory device, such as single electron memory device, are fabricated using these developed lithography techniques.