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NTIS 바로가기한국결정성장학회지 = Journal of the Korean crystal growth and crystal technology, v.15 no.4, 2005년, pp.135 - 140
Lee, Jung-Hun (R&D Center, Siltron Inc.) , Yoo, Jin-Bok (CFD solution Div., ATES) , Bae, So-Ik (R&D Center, Siltron Inc.)
Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole
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H. Habuka, et al., 'Model on transport phenomena and epitaxial growth of silicon thin film in $SiHCI_3-H_2$ system under atmospheric pressure', J. Crystal Growth 169 (1996) 61
H. Habuka, et al., 'Hot-wall and cold-wall environments for silicon epitaxial film growth', J. Crystal Growth 223 (2001) 145
H. Habuka, et al., 'Formation mechanism of local thickness profile of silicon epitaxial film', J. Crystal Growth 266 (2004) 327
S. Kommu, et al., 'A theoretical/experimental study of silicon epitaxy in horizontal single-wafer chemical vapor deposition reactors', J. Electrochem. Soc. 147 (2000) 1538
K. J. Kuijlaars, et al., 'Muljti-component diffusion phenomena in multiple-wafer chemical vapour deposition reactors', Chem. Eng. J. 57 (1995) 127.
C. R. Kleijin, et al., 'A mathematical model of the hydrodynamics and gas-phase reactions in silicon LPCVD in a single-wafer reactor', J. Electrochem. Soc. 138 (1991) 2190
H.K. Moffat and K.F. Jensen, 'Three-dimensional flow effects in silicon CVD in horizontal reactors', J. of Electrochem. Soc. 135 (1988) 459
S.V. Pantankar, 'Numerical heat transfer and fluid flow', McGraw-Hill, New York (1980)
H. Habuka, et al., 'Nonlinear increase in silicon epitaxial growth rate in a $SiHCl_3$ - $H_2$ system under atmospheric pressure',J. Crystal Growth 182 (1997) 352
D.I. Fotiadis, S. Kieda and K. F. Jensen, 'Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy', J. of Crystal Growth 102 (1990) 441
F.P. Incropera and D.P. DeWit, 'Fundamentals of heat and mass transfer', 4th Ed. WILEY (1996)
The Institution of Electrical Engineers, 'Properties of SILICON', INSPEC (1988)
M.L. Hitchman and K.F. Jensen, 'Chemical vapor deposition', ACADEMIC PRESS (1993)
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