초록

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Abstract ▼ AI-Helper

The indium zinc oxide (IZO) thin films were deposited using a radio frequency reactive magnetron sputtering method. Among the various processing variables, $O_{2}$ concentration and annealing temperature after deposition were selected and the optical, electrical, and structural properties...

The indium zinc oxide (IZO) thin films were deposited using a radio frequency reactive magnetron sputtering method. Among the various processing variables, $O_{2}$ concentration and annealing temperature after deposition were selected and the optical, electrical, and structural properties of IZO thin films were investigated. As the $O_{2}$ concentration increased, the deposition rate of IZO thin films decreased, the resistivity increased and the transmittance slightly increased. According to atomic force microscopy analysis, the IZO films deposited at pure Ar showed rough surface and those deposited with $O_{2}$ addition exhibited relatively smooth surface. The IZO thin films deposited at pure Ar were annealed at 250, 350, and $450^{\circ}C$, respectively. The IZO thin film deposited at pure Ar showed the lowest transmittance and resistivity and resistivity greatly increased at the annealing temperature exceeding $250^{\circ}C$. The higher annealing temperature IZO films were annealed at, the smoother surface the films showed. The x-ray diffraction revealed that IZO films annealed at higher temperature had better crystalline structures.

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