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논문 상세정보

LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성

Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD


This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

참고문헌 (10)

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  2. P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, Vol. 3, p. 210, 2000 
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이 논문을 인용한 문헌 (2)

  1. Chung, Gwiy-Sang ; Ohn, Chang-Min 2007. "Effect of Surface Treatments of Polycrystalline 3C-SiC Thin Films on Ohmic Contact for Extreme Environment MEMS Applications" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, 20(3): 234~239 
  2. 2008. "" Transactions on electrical and electronic materials, 9(6): 231~236 


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