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논문 상세정보

LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성

Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD

Abstract

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

참고문헌 (10)

  1. G. S. Chung, 'Thin SOl structures for sensing and integrated circuit applictions', Sensors & Actuators A, Vol. 39, p. 241, 1993 
  2. P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, Vol. 3, p. 210, 2000 
  3. D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Mabudian, 'Characterization of residual strain of residual strain in SiC films deposotion using 1, 3-disliliabutane for MEMS application', J. Microlith., Micrafab., Micrasyst., Vol. 2, p. 259, 2003 
  4. C. R. Stoldt, C. Carrara, W. R. Ashurst, D. Gao, R. T. Howe, and R. Maboudian, 'A low-temperature CVD process for silicon carbide MEMS', Sensors and Actuators A, Vol. 97, p. 410, 2002 
  5. R. J. Jwanowski, K. Franc, M. Heinone, and Paszkowics, 'XPS and XRD study of crystalline 3C-SiC grawn by sublimation', J. Alloys and Compounds, Vol. 286, p. 143, 1999 
  6. G. Brauer, A. Anwand. F. Eichhorn, W. Skorupa, C. Hofer, C. Teichert, J. Kuriplach, J. Cizek, I. Prochazka, P. G. Coleman, T. Nozawa, and A. Kohyama, 'Characterization of a SiC/ SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies', Appl. Surf. Sci., Vol. 252, No.8, p. 3342, 2006 
  7. M. B. J. Wijesundara, G. Valente, W. R. Ashurst, R. T. Howe, A. P. Pisano, C. Carraro, and R. Maboudian, 'Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor I. Growth structure, and chemical characterization', J. Electrochem. Soc., Vol. 151, No.3, p. C210, 2004 
  8. Mandracci, U. M. Meotto, and G. Barucca, 'Poly-crystalline SiC growth and characterization', Appl. Surf. Sci., Vol. 238, p. 331, 2004 
  9. Y. Mitsugu, I. Keiko, O. Miyuki, I. Tmommi, and S. Yushi, 'Raman scattering spectroscopy of 3C-SiC(111) heteroeptaxial films', Jpn. J. Appl. phys., Vol. 33, p. 997, 1994 
  10. T. M. Mejean, E. Abdelmoun, and P. Quintard, 'Oxide layer on silicon carbide powder: a FT-IR investigation', J. Molecular Structure, Vol. 349, p. 105, 1995 

이 논문을 인용한 문헌 (2)

  1. Chung, Gwiy-Sang ; Ohn, Chang-Min 2007. "Effect of Surface Treatments of Polycrystalline 3C-SiC Thin Films on Ohmic Contact for Extreme Environment MEMS Applications" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, 20(3): 234~239 
  2. 2008. "" Transactions on electrical and electronic materials, 9(6): 231~236 

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