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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.44 no.3 = no.357, 2007년, pp.1 - 5
SiOC films were made using the oxygen and bistrimethylsilylmethane mixed precursor. The chemical properties of SiOC films divided into three properties, organic, hybrid and inorganic depending on the flow rate ratio between oxygen and bistrimethylsilylmethane precursor. The films with organic proper...
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