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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.44 no.5 = no.359, 2007년, pp.1 - 7
신현호 (인하대학교 전자공학과) , 강성준 (전남대학교 전기 및 반도체 공학과) , 윤영섭 (인하대학교 전자공학과)
AZO thin films have been fabricated on quartz substrate with various Al doping concentrations and annealing temperatures by sol-gel method. The bset condition of (002) orientation and smooth surface (rms = 1.082 nm) is obtained for the AZO thin film doped with 1 mol % Al and annealed at 550
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