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電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.46 no.4 = no.382, 2009년, pp.21 - 27
가대현 (인천대학교 전자공학과) , 조원주 (광운대학교 전자재료공학과) , 유종근 (인천대학교 전자공학과) , 박종태 (인천대학교 전자공학과)
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In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measure...
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