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A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping 원문보기

Journal of semiconductor technology and science, v.10 no.2, 2010년, pp.107 - 117  

Tiwari, Pramod Kumar (Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University) ,  Jit, S. (Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University)

Abstract ▼ AI-Helper 아이콘AI-Helper

An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthr...

주제어

#DG MOSFET   #ATLAS simulation   #2D potential   #subthreshold swing   #effective conduction path effect (ECPE)   #gaussian doped channel  

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제안 방법

  • The current conduction path is observed to be confined near the center of the channel for lower doping concentration and the path is confined near the channel-oxide interface for considerably higher doping concentrations in the channel. Although, the model is developed for a symmetric DG MOS structure, it can also be extended to asymmetric structures for different values of Rp with incorporating suitable modifications in the model.
  • In this paper, an attempt has been made to explore the effective conduction path effect concept to model the doping dependent subthreshold swing of symmetric DG-MOSFETs with a Gaussian profile in the vertical direction of the channel as was considered by Zhang et al. [21] for SOI MOSFETs.
  • [11] proposed an analytical model for the subthreshold swing of uniformly doped DG-MOSFETs in terms of the charge centroid parameter deff. The model was used to study the subthreshold characteristics with asymmetry in gate-oxide thickness, gate-material work function and gate voltages. They had developed an approximated closed form expression for the effective conduction path effect parameter ( deff ) as a function of the difference in two gate voltages but independent of doping concentration of the uniformly doped channel of DG MOSFETs.

이론/모형

  • In this paper, a subthreshold swing model for Gaussian doped symmetric DG MOSFETs is presented. The model is based on the effective subthreshold conduction effect phenomenon in DG MOS devices. The effect of doping and various device parameters on the subthreshold swing S are examined in this paper.
  • VG characteristics (both for on current and subthreshold current) in DG MOSFETs with L > 10 nm by using a suitable modification of beta=1 and vsat.n parameters in the Caughey-Thomas parallel high field mobility model implemented in ATLAS [22].
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참고문헌 (28)

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