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NTIS 바로가기Journal of semiconductor technology and science, v.10 no.2, 2010년, pp.107 - 117
Tiwari, Pramod Kumar (Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University) , Jit, S. (Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University)
An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthr...
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