[논문]Effect of Hydrogen in the Gate Insulator on the Bottom Gate Oxide TFT

KoPark, Sang-Hee; Ryu, Min-Ki; Yang, Shin-Hyuk; Yoon, Sung-Min; Hwang, Chi-Sun

doi:10.1080/15980316.2010.9656256

[국내논문] Effect of Hydrogen in the Gate Insulator on the Bottom Gate Oxide TFT 원문보기

Journal of information display, v.11 no.3, 2010년, pp.113 - 118

KoPark, Sang-Hee (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI)) , Ryu, Min-Ki (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI)) , Yang, Shin-Hyuk (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI)) , Yoon, Sung-Min (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI)) , Hwang, Chi-Sun (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI))

Abstract ▼ AI-Helper

The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.

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제안 방법

Furthermore, the deposition process for the same GI material also resulted in different device performance levels. In this study, an attempt was made for the first time to investigate the main effect of hydrogen in the GI of alumina on the characteristics of bottom gate IGZO TFTs in terms of the gate bias stress stability and the optical stability, using the atomic layer deposition (ALD) method for the GI process with a different oxygen precursor.
To investigate the effect of hydrogen in the alumina GI on the bottom gate IGZO TFT, the Al₂O₃was deposited using different oxygen precursors--i.e., water and ozone. The alumina deposited with the water precursor contained more hydrogen than that deposited with ozone.
It was recently known that most oxide TFTs show negative-bias-enhanced photo instability due to oxygen vacancy and interface charge trapping. The effect of the hydrogen in the GI on the photo stability was examined by measuring the V_th shift under the NBS with white light illumination. Fig.
The alumina film from ozone contained less H than that from water. To confirm the effect of the hydrogen amount in each Al₂O₃ deposition process, vacuum annealing of the GIs of TFT A and B was performed at 300℃ for 2 hours before the active layer (TFT C for A and TFT D for B) was deposited. While the vacuum annealing of TFT A induced a large V_on shift for TFT C to have a V_on of -0.

이론/모형

The passivation layer of Al₂O₃ was deposited via ALD, using water. All the patterning processes were performed using the photolithographic method and the wet-etching process. The electrical characteristics of the TFTs were measured with a semiconductor parameter analyzer (Agilent B1500A) in darkness.

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