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제안 방법
- Furthermore, the deposition process for the same GI material also resulted in different device performance levels. In this study, an attempt was made for the first time to investigate the main effect of hydrogen in the GI of alumina on the characteristics of bottom gate IGZO TFTs in terms of the gate bias stress stability and the optical stability, using the atomic layer deposition (ALD) method for the GI process with a different oxygen precursor.
- It was recently known that most oxide TFTs show negative-bias-enhanced photo instability due to oxygen vacancy and interface charge trapping. The effect of the hydrogen in the GI on the photo stability was examined by measuring the Vth shift under the NBS with white light illumination. Fig.
- The alumina film from ozone contained less H than that from water. To confirm the effect of the hydrogen amount in each Al2O3 deposition process, vacuum annealing of the GIs of TFT A and B was performed at 300℃ for 2 hours before the active layer (TFT C for A and TFT D for B) was deposited. While the vacuum annealing of TFT A induced a large Von shift for TFT C to have a Von of -0.
- To investigate the effect of hydrogen in the alumina GI on the bottom gate IGZO TFT, the Al2O3 was deposited using different oxygen precursors--i.e., water and ozone. The alumina deposited with the water precursor contained more hydrogen than that deposited with ozone.
이론/모형
- The passivation layer of Al2O3 was deposited via ALD, using water. All the patterning processes were performed using the photolithographic method and the wet-etching process. The electrical characteristics of the TFTs were measured with a semiconductor parameter analyzer (Agilent B1500A) in darkness.
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