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논문 상세정보

비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구

The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO

Abstract

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

참고문헌 (9)

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이 논문을 인용한 문헌 (1)

  1. Lee, Seok-Ryeol ; Lee, Kyong-Taik ; Kim, Jae-Yeal ; Yang, Myoung-Su ; Kang, In-Byeong ; Lee, Ho-Seong 2014. "Characteristics of IGZO Films Formed by Room Temperature with Thermal Annealing Temperature" 한국표면공학회지 = Journal of the Korean institute of surface engineering, 47(4): 181~185 

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