선택한 단어 수는 입니다.
최소 단어 이상 선택하여야 합니다.
최소 단어 이상 선택하여야 합니다.
선택한 단어 수는 30입니다.
최대 10 단어까지만 선택 가능합니다.
최대 10 단어까지만 선택 가능합니다.
제안 방법
- We know the variations of threshold voltage is large with increasing channel thickness and the variation of threshold voltage according to gate oxide thickness is neglected at small channel thickness. Note the variation of subthreshold swing with gate oxide thickness is also neglected at small channel thickness, and the subthreshold swings is nearly constant above gate length of 20nm regardless of gate oxide thickness The results in this study can use to design optimum DGMOSFET.
이론/모형
- Resulting doping profiles may be used in a straightforward manner to generate the entire structure of a semiconductor device for subsequent evaluation of I-V curves in a few minutes on a PC. The algorithm is based on the finite-difference formulation and a rectangular mesh. The physical model adopted describes the diffusion process for up to three interacting charged impurities in a two-dimensional domain with moving oxide boundary and impurity segregation at the Si/SiO2 interface.
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