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NTIS 바로가기Semiconductor science and technology, v.23 no.1, 2008년, pp.015006 -
Lu, Huaxin , Lu, Wei-Yuan , Taur, Yuan
This paper presents a systematic study of the body doping effect on symmetric double-gate (DG) MOSFETs. Two-dimensional simulation tools are used to investigate the doping effect on long-channel and short-channel devices. Both n-type and p-type doping are studied. For long-channel devices, the thres...
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