[논문]Electromigration and Thermomigration in Flip-Chip Joints in a High Wiring Density Semiconductor Package

Yamanaka, Kimihiro

doi:10.6117/kmeps.2011.18.3.067

[국내논문] Electromigration and Thermomigration in Flip-Chip Joints in a High Wiring Density Semiconductor Package 원문보기

마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.18 no.3, 2011년, pp.67 - 74

Yamanaka, Kimihiro (School of Information Science and Technology, Chukyo University)

Abstract ▼ AI-Helper

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

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제안 방법

In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints.

대상 데이터

The chip was then bonded onto the substrate to form the joints in the second reflow. The solder materials were SAC and In, and the underfill was a commercially available epoxy resin. The solder bump height was approximately 70 and 100 µm for the In and SAC solders.
2. The solder material was SAC305. Fig.
All Cu patterns were modeled. The simulation tool was ANSYS v11.0 and the model was a SOLID69 eight-node hexahedral coupled field element. The accuracy of the model has been verified and the difference in the temperature measurements was less than 1℃.
A "q" in the figure indicates the direction of thermal flow. The solder material in this figure was SAC305 and the current density was 10 kA/cm², which corresponds to a direct current of 0.79 A, and the temperature at the joint was 180℃. The temperature on the chip side was higher than that on the substrate side by 0.

이론/모형

In this paper, the value calculated from the direct current per solder/Cu contact area is referred to as the current density in the flip-chip joint. The joint resistance was measured in-situ during the test using the four-point probing method. The substrate side was attached to the hot plate.

참고문헌 (20)

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상세보기
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