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A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors 원문보기

Journal of semiconductor technology and science, v.11 no.4, 2011년, pp.278 - 286  

Kim, Ji-Hyun (Department of Electronics Engineering Ewha Womans University) ,  Sun, Woo-Kyung (Department of Electronics Engineering Ewha Womans University) ,  Park, Seung-Hye (Department of Electronics Engineering Ewha Womans University) ,  Lim, Hye-In (Department of Electronics Engineering Ewha Womans University) ,  Shin, Hyung-Soon (Department of Electronics Engineering Ewha Womans University)

Abstract ▼ AI-Helper 아이콘AI-Helper

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinat...

주제어

#MOSFET   #gate voltage   #quantum effect   #short channel   #surrounding gate   #Poisson  

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제안 방법

  • To enhance the accuracy of our model, we considered the Vg dependence of the quantum effects in the inversion region. A numerical simulation was performed to confirm the validity of our simplification and the analytical solution to our model. The I-V characteristics of the model were compared with device simulation results.
  • The difference between Ec_surface and EQM,1 increases with increasing Vg, which reveals that the quantum effect is dependent on Vg. According to these phenomena, the new model takes into account the quantum effects with dependence on Vg using a triangular well and the quantum effects are neglected in the sub-threshold region for simplification.
  • However, it was developed for predicting the behavior of potential distribution along the channel only in the weak inversion region. Therefore, in this study, we tried to produce a compatible shortchannel model that is accurate for all Lg and gate voltages (Vg) that does not require using numerical iterations to find solutions.
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참고문헌 (17)

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    상세보기 crossref

  2. A. Son, J. Kim, N. Jeong, J. Choi and H. Shin, "Improved Explicit current-Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor," J. J. Appl. Phys., Vol.48, pp.412-413, 2009. 

    상세보기 crossref

  3. Y. Chen and J. Luo, "A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using An Analytical Model," Proc. Int. Conf. Modeling Simulation of Microsystems, Vol.1, pp.546-549, 2001. 

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    상세보기 crossref

  5. B. Iniguez, D. Jimenez, J. Roig, H.-A. Hamidi, L. F. Marsal and J. Pallares, "Explicit continuous model for long-channel undoped surrounding-gate MOSFETs," IEEE Trans. Electron. Devices, Vol.52, No.8, pp.1868-1873, 2005. 

    상세보기 crossref

  6. H. A. E. Hamid, B. Iniguez and J. R. Guitart, "Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate- All-Around-Based MOSFETs," IEEE Electron Device, Vol.54, No.3, pp.572-579, 2007. 

    상세보기 crossref

  7. A. Aouaj, A. Bouziane and A. Nouacry, "Analytical 2D modelling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET", International Journal of Electronics, Vol.92, No.8, pp.437-443, 2005. 

    상세보기 crossref

  8. C. Suh, "Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET," J. Semi. Tech. and Sci., Vol.11, No.2, pp.111-120, 2011. 

    원문보기 상세보기 crossref

  9. A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, G. Ghibaudo, G. Pananakakis and R. Clerc, "A compact drain current model of short-channel cylindrical gate-all-around MOSFETs," Semicond. Sci. Technol., Vol.24, No.7, pp.075017, 2009. 

    상세보기 crossref

  10. A. Kranti, S. Haldar, R. S. Gupta, "Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/ surrounding gate MOSFET", Microelectronic Engineering, Vol.56, No.3-4. , pp.241-259, 2001. 

  11. Y. Yuan, B. Yu, J. Song and Y. Taur, "An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass", Solid State elec., Vol.53, No.2, pp.140-144, 2009. 

    상세보기 crossref

  12. J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki, "Quantum- Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates," NSTI nanotech, Vol.2, pp.163-166, 2004. 

  13. S. Mohammadi and A. Afzali-Kusha, " A Surface Field Based Model for Ultra Thin Body Undoped Symmetric DG MOSFETs," 10th IEEE Int. Conf. on ULIS, pp.357-361, Mar., 2009. 

  14. J. Davies (1998), The physics of low dimensional semiconductors: an Introduction, Cambridge University Press. 

  15. K. Lee, J. Choi, S. Sim and C. Kim, "Physical Understanding of Low-Field Carrier Mobility in Silicon MOSFET Inversion Layer," IEEE Trans. Electron. Devices, Vol.38, No.8, pp.1905-1912, 1991. 

    상세보기 crossref

  16. F. Stern, "Self-Consistent Result for n-type Si Inversion Layer," Phys. Review B, Vol.5, No.12, pp.4891-4899, 1972. 

    상세보기 crossref

  17. S. Takagi, A. Toriumi, M. Iwase and H. Tango, "On the Universality of Inversion Layer Mobility in Si MOSFET's: PartⅡ- Effects of Surface Orientation," IEEE Trans. Electron. Devices, Vol.41, No.12, pp.2363-2368, 1994. 

    상세보기 crossref
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