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NTIS 바로가기Journal of semiconductor technology and science, v.11 no.4, 2011년, pp.278 - 286
Kim, Ji-Hyun (Department of Electronics Engineering Ewha Womans University) , Sun, Woo-Kyung (Department of Electronics Engineering Ewha Womans University) , Park, Seung-Hye (Department of Electronics Engineering Ewha Womans University) , Lim, Hye-In (Department of Electronics Engineering Ewha Womans University) , Shin, Hyung-Soon (Department of Electronics Engineering Ewha Womans University)
In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinat...
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