Yoo, Jin-Yeop
(Department of Nano-semiconductor Engineering, National Korea Maritime University)
,
Choi, Sung-Kuk
(Department of Nano-semiconductor Engineering, National Korea Maritime University)
,
Jung, Soo-Hoon
(Department of Nano-semiconductor Engineering, National Korea Maritime University)
,
Cho, Young-Ji
(Department of Nano-semiconductor Engineering, National Korea Maritime University)
,
Lee, Sang-Tae
(Department of Offshore Plant Management, National Korea Maritime University)
,
Kil, Gyung-Suk
(Division of Electrical and Electronics Engineering, National Korea Maritime University)
,
Lee, Hyun-Jae
(PAN-Xal Co., Ltd.)
,
Yao, Takafumi
(Center for Interdisciplinary Research, Tohoku University)
,
Chang, Ji-Ho
(Department of Nano-semiconductor Engineering, National Korea Maritime University)
O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rat...
O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.
O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.
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제안 방법
The polarity of the ZnO films was estimated and determined by evaluating the growth rate, etching rate, and surface morphology of each film. Chemical etching was performed using a diluted HCl solution (0.3 Vol. %), and the thickness and surface morphologies of the samples were measured by profiler and atomic force microscopy, respectively.
In the present study, (002) and (101) omega scans and a (101) pole figure scan all were measured. The polarity of the ZnO films was estimated and determined by evaluating the growth rate, etching rate, and surface morphology of each film. Chemical etching was performed using a diluted HCl solution (0.
이론/모형
The sputtering condition of the ZnO film was optimized in terms of the surface morphology and growth rate of the ZnO film. High-resolution X-ray diffraction (HRXRD) measurement was used to evaluate the crystallinity of the ZnO film. In the present study, (002) and (101) omega scans and a (101) pole figure scan all were measured.
참고문헌 (15)
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