[논문]Chemical HF Treatment for Rear Surface Passivation of Crystalline Silicon Solar Cells

Choi, Jeong-Ho; Roh, Si-Cheol; Jung, Jong-Dae; Seo, Hwa-Il

doi:10.4313/teem.2013.14.4.203

[국내논문] Chemical HF Treatment for Rear Surface Passivation of Crystalline Silicon Solar Cells 원문보기

Transactions on electrical and electronic materials, v.14 no.4, 2013년, pp.203 - 207

Choi, Jeong-Ho (Department of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) , Roh, Si-Cheol (Department of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) , Jung, Jong-Dae (Department of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) , Seo, Hwa-Il (Department of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)

Abstract ▼ AI-Helper

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

Keyword

AI 본문요약
AI-Helper

* AI 자동 식별 결과로 적합하지 않은 문장이 있을 수 있으니, 이용에 유의하시기 바랍니다.

제안 방법

This research attempted to identify improvements in crystalline silicon solar cell efficiency by improving the rear side passivation characteristics using a chemical HF treatment method on p-type silicon wafers. PERCs were fabricated with HF treatment on the rear side of the wafer to measure the efficiency.

대상 데이터

SiN_x was deposited using plasma-enhanced chemical vapor deposition (PECVD). Silane (SiH₄), ammonia (NH₃), and nitrogen (N₂) gases were used, and the substrate temperature was 400℃. The NH₃/SiH₄ ratio was 4, and the RF power was 600 W.

참고문헌 (19)

K. H. Kim and J. S. Yi, Introduction to Solar Cell Production, (Dooyangsa, Seoul, 2009).
J. H. Lee, D. G. Lim and J. S. Yi, Principle of solar cell, (Hongrung publishing company, Seoul, 2005).
D. Y. Lee, H. H. Lee, J. Y. Ahn, H. J. Park, J. H. Kim, H. J. Kwon and J. W. Jeong, A new back surface passivation stack for thin crystalline silicon solar cells with screen-printed back contacts, Solar Energy Materials & Solar Cells 95, p. 26-29 (2011) [DOI: http://dx.doi.org/10.1016/j.solmat.2010.05.004].

상세보기
Ryo Ozaki, Hidenori Yashiki, Ryusuke Imai, Sachiyo Ooka, Yuji Kurimoto, Ichiro Yamasaki, Yoshihiro Yamamoto and Tatsuo Saga, Fabrication of SiN rear passivated thin multi-crystalline silicon solar cell with 30 ${\mu}m$ -wide screen-printed front electrode, 24th EUPVSEC, p. 1175-1178 (2009).
H. Angermann, W. Henrion, M. Rebien and A. Roseler, Wetchemical preparation and spectroscopic characterization of Si interfaces, Appl. Surf. Sci. 235, p. 322-339 (2004) [DOI: http://dx.doi.org/10.1016/j.apsusc.2004.05.105].

상세보기
H. Angermann, W. Henrion, M. Rebien and A. Roseler, Wetchemical passivation and characterization of silicon interfaces for solar cell applications, Solar Energy Mater. & Solar Cells 83, p. 331-346 (2004) [DOI: http://dx.doi.org/10.1016/j.solmat.2004.01.031].

상세보기
H. Angermann, Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pretreatment, Appl. Surf. Sci. 254, p. 8067-8074 (2008) [DOI: http://dx.doi.org/10.1016/j.apsusc.2008.03.022].

상세보기
A. Laades, J. Brauer, U. Sturzebecher, K. Neckermann, K. Klimm, M. Blech, K. Lauer, A. Lawerenz and H. Angermann, Wet-chemical treatment of solar grade CZ silicon prior to surface passivation, 24th EUPVSEC, p. 1640-1644 (2009).
S. G. Kwon, W. Y. Jeong and J. H. Wang, No damage and high selective cleaning technology for very large scale integrated circuit, ITFIND, p. 1-33 (2004).
Florence W. Chen, Tsu-Tsung A. Li and Jeffrey E. Cotter, PECVD silicon nitride surface passivation for high-efficiency n-type silicon solar cells, IEEE 4th WCPEC 1, p. 1020-1023 (2006).
S. Dauwe, L. Mittelstadt, A. Metz and R. Hezel Experimental Evidence of Parasitic Shunting in Silicon Nitride Rear Surface Passivated Solar Cells, Prog. Photovolt: Res. Appl., p. 271-278 (2002).
K. D. Mackenzie, D. J. Johnson, M. W. DeVre, R. J. Westerman and B. H. Reelfs, Stress control of Si-based PECVD dielectrics, 207th Electrochemical Society Meeting, PV2005-01, p. 148-159 (2005).
Korea University of Technology and Education $E^2$ -Semicinductor Equipment HRD Center, The study of manufacturing process for the high efficiency screen printed crystalline solar cell (Korea University of Technology and Education, Cheonan, 2010)
J. H. Choi, S. C. Roh, D. Y. Yu, Z. H. Li, Y. C. Kim and H. I. Seo, A Study on HF Chemical Passivation for Crystalline Silicon Solar Cell Application, J. the Semiconductor & Display Equipment Technology 10(1), p. 51-55 (2011).
G. Agostinelli, P. Choulat, H. F. W. Dekkers, E. Vermarien and G. Beaucarne, Rear surface passivation for industrial solar cells on thin substrates, IEEE 4th WCPEC 1, p. 1004-1007 (2006).
S. Dauwe, L. Mittelstad, A. Metz, J. Schmidt and R. Hezel, Lowtemperature rear surface passivation schemes for >20% efficient silicon solar cells, 3rd World Conference on Photovoltaic Energy Conversion, p. 1395-1398 (2003).
J. Dupuis, E. Fourmond, O. Nichiporuk, F. Gibaja and M. Lemiti, Rear passivation schemes for industrial silicon solar cells, 23rd EUPVSEC, p. 1633-1636 (2008).
F. Llopis and I. Tobias, The role of rear surface in thin silicon solar cells, Solar Energy Materials & Solar Cells 87, p. 481-492 (2005) [DOI: http://dx.doi.org/10.1016/j.solmat.2004.06.015].

상세보기
P. Ortega, A. Orpella, G. Lopez, I. Martin, C. Voz, R. Alcubilla, I. Snchez-Aniorte, M. Colina, F. Perales and C. Molpeceres, Optimization of the rear point contact scheme of crystalline silicon solar cells using laser-fired contacts, 25th EUPVSEC, p. 2126-2129 (2010).

활용도 분석정보

상세보기

다운로드

내보내기

활용도 Top5 논문

해당 논문의 주제분야에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 논문명, 저널/프로시딩명, 저자 , 발행년, 권, 호, 시작페이지, 끝페이지, 발행기관 관리번호, 논문명, 대등논문명, 저자 , 저널/프로시딩명, 발행기관, 발행년, 발행언어, 권, 호, 시작페이지, 끝페이지, ISBN, ISSN, 주제분야, 키워드, 초록(한글), 초록(영문), 저자(소속기관)
저장형식	Text(ASCII format) Excel format RefWorks Direct Export RIS format (for Reference Manager, ProCite, EndNote), Scholar's Aids, Mendeley
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증