선택한 단어 수는 입니다.
최소 단어 이상 선택하여야 합니다.
최소 단어 이상 선택하여야 합니다.
선택한 단어 수는 30입니다.
최대 10 단어까지만 선택 가능합니다.
최대 10 단어까지만 선택 가능합니다.
제안 방법
- In the case of nondestructive testing of the oxides, the properties of unstressed oxides were first determined and were compared with the properties of oxides stressed at various levels. Current through the oxide was monitored in order to calculate the total charge that had passed through the oxide during the stress and the current to voltage measurements. Capacitors and transistors using n+ silicon gates were made on 2 to 5 ohm cm p-type silicon and 0.
- The charge injection reliability has been involved with the measurement and characterization of leakage current initiated by the passage of tunneling currents through the oxide. The study have been the determination of the physical processes taking place in the oxides during stress on time and stress off time and the use of the knowledge of the physical processes for reliability in the polarity dependence of the interface trap generation, the number and distribution of traps in a stressed oxide measured using low level stress currents, low level transient currents the effect of different gate materials and gate oxide thicknesses.
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