This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power eff...
This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using $0.18{\mu}m$ BCD process with high power MOSFET options, and the die area is $1870{\mu}m{\times}1430{\mu}m$. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.
This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using $0.18{\mu}m$ BCD process with high power MOSFET options, and the die area is $1870{\mu}m{\times}1430{\mu}m$. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.
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대상 데이터
The charge pump core uses 4 stages to increase the output voltage range. The circuit consists of charge transfer switches (MN1-MN8 , MP1-MP8), pumping capacitors (CT1 , CT2 , CT3 , CT4 , CB1 ,CB2 , CB3 and CB4), output capacitors (CLV, CHV) and output nodes of each stage (CPLV0, VOUT_LV, CPHV0, and VOUT_HV). In the high voltage mode of the multi-mode charge pump, the operation is similar to the operations of the low voltage mode, except that the voltage levels of Φ3, Φ4, Φ3B and Φ4B are maintained to zero (Φ3 , Φ4) or VIN (Φ3B, Φ4B), equaling the supply voltage of the process, in the low voltage mode.
The proposed chip is fabricated in 0.18 mm BCD technology, a single poly layer, four layers of metal, options of metal-insulator-metal (MIM) capacitors, and high sheet resistance poly resistors. The chip layout pattern is shown in Fig.
1 shows a block diagram of the proposed automatic reconfigurable charge pump. The proposed reconfigurable charge pump is composed of the a Charge Pump Core, Clock Driver, Output Voltage Sense Network, MUX, Low Pass Filter (LPF), Reference Voltage Generator, Control Signal Generator (CSG) and Switch (SW0) connected to the External IC. Its configuration is automatically changed to generate the dual outputs, VOUT_LV and VOUT_HV, from the second stage and fourth stage, respectively.
성능/효과
Based on the measurement results, in the case of connecting a panel with a high resistance of about 300 Ω, the designed reconfigurable charge pump has enough capability to drive the touch panel.
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