[논문]Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

Lee, Jung-Yeon; Park, Bong-Ryeol; Lee, Jae-Gil; Lim, Jongtae; Cha, Ho-Young

doi:10.5573/jsts.2015.15.1.016

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET 원문보기

Journal of semiconductor technology and science, v.15 no.1, 2015년, pp.16 - 21

Lee, Jung-Yeon (School of Electrical and Electronic Engineering, Hongik University) , Park, Bong-Ryeol (School of Electrical and Electronic Engineering, Hongik University) , Lee, Jae-Gil (School of Electrical and Electronic Engineering, Hongik University) , Lim, Jongtae (School of Electrical and Electronic Engineering, Hongik University) , Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)

Abstract ▼ AI-Helper

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

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제안 방법

In order to investigate the interface quality, the capacitance-voltage (C-V) characteristics were measured before and after PMA. C-V measurements were carried out using a circular recessed C-V pattern with a diameter of 50 mm.
It was reported that the insulator itself and interface conditions between insulator and semiconductor surface could be improved by appropriate post-annealing processes [8-12]. In this study, we investigated the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET with ICPCVD SiO₂ gate oxide.

대상 데이터

It should be noted that negative shift in threshold voltage was observed after forming gas PMA. In order to take a closer look at threshold voltage shift and uniformity issues, about 30 devices were measured at various locations in the sample. The threshold voltage variations before and after PMA are compared in Fig.
The epitaxial layer structure consisted of a 4 nm undopped GaN capping layer, a 20 nm undoped AlGaN barrier, a 5 µm undoped GaN buffer on an N-type Si (111) substrate.

이론/모형

The ideal capacitance characteristics were obtained by Schroder’s method [19].

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