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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.39 no.7, 2018년, pp.995 - 998
Kim, Dong-Hwan (Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea) , Park, Hongjong (Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea) , Eom, Su-Keun (Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea) , Jeong, Jun-Seok (Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea) , Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Seo, Kwang-Seok (Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea)
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal–insulator–semiconductor (MIS) structure with SiNx/HfON dual dielectric ...
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