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NTIS 바로가기Journal of electrical engineering & technology, v.10 no.3, 2015년, pp.1131 - 1137
Kim, Sung Yoon (School of Electronics Engineering, Kyungpook National University) , Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) , Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) , Kim, Jin Su (School of Electronics Engineering, Kyungpook National University) , Cho, Seongjae (Department of Electronics Engineering, Gachon University) , Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University) , Kang, In Man (School of Electronics Engineering, Kyungpook National University)
Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar ...
B. Gelmont, K. Kim, and M. Shur, “Monte Carlo simulation of electron transport in gallium nitride,” J. Appl. Phys., vol. 74, no. 3, pp. 1818-1820, Aug. 1993.
H. Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, and U. Mishra, “Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts,” IEEE Electron Device Lett., vol. 26, no. 5, pp. 283-285, May 2005.
M. Micovic, N. X. Nguyen, P. Janke, W.-S. Wong, P. Hashimoto, L.-M. McCray, and C. Nguyen, “GaN/AlGaN high electron mobility transistors with f T of 110 GHz,” IEEE Electronics Lett., vol. 36, no. 4, pp. 358-359, Feb. 2000.
U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, “GaN-Based RF power devices and amplifiers” Proc. IEEE, vol. 96, no. 2, pp.287-305, Feb. 2008.
W. Huang, T. Khan, and T. P. Chow, “Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates,” Proc. of the 18th International Symposium on Power Semiconductor Devices & IC’s, Jun. 2006.
G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O.W. Holland, M.K. Das, and J.W. Palmour, “Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide,” IEEE Electron Device Lett., vol. 22, no. 4, pp. 176-178, Apr. 2001.
M. Kanamura, T. Ohki, T. Kikkawa, K. Imanishi, T. Imada, A. Yamada, and N. Hara, “Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics,” IEEE Electron Device Lett., vol. 31, no. 3, pp. 189-191, Mar. 2010.
D. Okamoto, H. Yano, K. Hirata, T. Hatayama, and T. Fuyuki, “Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide,” IEEE Electron Device Lett., vol. 31, no. 7, pp. 710-712, Jul. 2010.
K. Matocha, T. Paul Chow, and R. J. Gutmann, “High-voltage normally off GaN MOSFETs on sapphire substrates,” IEEE Trans. Electron Devices, vol. 52, no. 1, pp. 6-10, Jan. 2005.
G. Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, “Induced strain mechanism of current collapse in AlGaN / GaN heterostructure field-effect transistors,” Appl. Phys. Lett., vol. 79, no. 16, pp. 2651-2653, Oct. 2001.
H. Otake, K. Chikamatsu, A. Yamaguchi, T. Fujishima, and H. Ohta, “Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates,” Appl. Phys. Express, vol. 1, no. 1, pp. 011105-1-3, Jan. 2008.
S. Yaegassi, M. Okada, Y. Saitou, M. Yokoyama, K. Nakata, K. Katayama, M. Ueno, M. Kiyama, T. Katsuyama, and T. Nakamura, “Vertical heterojunction field-effect transistors utilizing re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates,” Phys. Status Solidi, vol. 8, no. 2, pp. 450-452, Feb. 2011.
S. K. Oh, C. G. Song, T. Jang, and J. S. Kwak, “Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire,” J. Semicond. Technol. Sci., vol. 11, no. 6, pp. 617-621, Dec. 2013.
H. Takato, K. Sunouchi, N. Okabc, A. Nitayama, K. Hieda, F. Horiguchi, and F. Masuoka, “High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs,” in IEDM Tech. Dig., pp. 222-225, Dec. 1988.
S. Cho, J. S. Lee, K. R. Kim, B.-G. Park, James S. Harris, Jr., and I. M. Kang, “Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors,” IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4164-4171, Dec. 2011.
M. Karthigai Pandian, and N. B. Balamurugan, “Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries,” J. Electr. Eng. Technol., vol. 9, no. 6, pp. 2079-2088, Nov. 2014.
SILVACO International, ATLAS User’s Manual, Apr. 2012.
S. C. Binari, P. B. Klein, and T. E. Kazior, “Trapping effects in GaN and SiC microwave FETs,” Proc. IEEE, vol. 9, no. 6, pp. 1048-1058, Jun. 2002.
G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, “Surface-Related Drain Current Dispersion Effects in AlGaN-GaN HEMTs,” IEEE Trans. Electron Devices, vol. 51, no. 10, pp. 1554-1561, Oct. 2004.
S. Huang, Q. Jiang, S. Yang, C. Zhou, and K. J. Chen, “Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film,” IEEE Electron Device Lett., vol. 33, no. 4, pp. 516-518, Apr. 2012.
S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-Grown AlN Passivation for AlGaN / GaN HEMTs: Compensation of Interface Traps by Polarization Charges,” IEEE Electron Device Lett., vol. 34, no. 2, pp. 193-195, Feb. 2013.
S. Karmalkar and U. K. Mishra, “Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate,” IEEE Trans. Electron Devices, vol. 48, no. 8, pp. 1515-1521, Aug. 2001.
J. -G. Lee, H. -J. Lee, H. -Y. Cha, M. Lee, Y. Ryoo, K.-S. Seo, and J. -K. Mun, “Field Plated AlGaN/GaN on-Si HEMTs for High Voltage Switching Applications,” J. Korean Phys. Soc., vol. 59, no. 3, pp. 2297-2300, Sep. 2011.
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