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NTIS 바로가기Journal of semiconductor technology and science, v.16 no.2, 2016년, pp.191 - 197
Son, Dokyun (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University) , Jeon, Sangbin (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University) , Kang, Myounggon (Department of Electronics Engineering, Korea National University of Transportation) , Shin, Hyungcheol (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University)
In this paper, we investigated the hotcarrier injection (HCI) mechanism, one of the most important reliability issues, in 10 nm node Input/Output (I/O) bulk FinFET. The FinFET has much intensive HCI damage in Fin-bottom region, while the HCI damage for planar device has relatively uniform behavior. ...
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