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NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.33 no.3, 2020년, pp.169 - 172
Park, Jinsu (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Showdhury, Sanchari (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Yoon, Geonju (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Kim, Jaemin (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Kwon, Keewon (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Bae, Sangwoo (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) , Kim, Jinseok (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) , Yi, Junsin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have...
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