선택한 단어 수는 입니다.
최소 단어 이상 선택하여야 합니다.
최소 단어 이상 선택하여야 합니다.
선택한 단어 수는 30입니다.
최대 10 단어까지만 선택 가능합니다.
최대 10 단어까지만 선택 가능합니다.
제안 방법
- The unified trench power MOSFET uses different technology, a 600 V-based high electricity characteristic, which, when compared to the current planar power MOSFET, has a lower heat resistance. In this thesis, in order to create a unified trench gate power MOSFET that has 1.5 times more chips per wafer and low heat resistance, the trench method, junction termination method, and trench process-related method are introduced, and the semiconductor batch production process is also researched. An optimized unified trench gate power MOSFET was designed, and its electrical characteristics were analyzed.
- 5 times more chips per wafer and low heat resistance, the trench method, junction termination method, and trench process-related method are introduced, and the semiconductor batch production process is also researched. An optimized unified trench gate power MOSFET was designed, and its electrical characteristics were analyzed.
- 0 ㎛ consists of NF3 base, Cl2/O2 base, SF6 base, etc. The NF3 has a slow processing time but its surface condition is superior, which makes it ideal as a leakage current surface, and the SF6 has a high etch rate and oxide film selection rate, so more process testing was done.
- This thesis analyzed the trench process, unified field limit ring, and other developed products of a 500 V level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF6.
대상 데이터
- cell. The unit cell is designed in a stripe pattern, the unit cell pitch is 8.25 ㎛, and the trench depth is 1.0 ㎛. The N+ source is 1.
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