참고문헌 (25)

1. J. Yota, J. Hander, and A. A. Saleh, "A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films", J. Vac. Sci. Technol. A, vol. 18, No. 2, pp. 372-376, Mar. 2000. 

   상세보기

2. H. Nagel, A. G. Aberle, and R. Hezel, "Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide", Prog. Photovolt: Res. Appl., vol. 7, No. 4, pp. 245-260, Jul. 1999. 

   상세보기

3. A. G. Aberle, "Surface passivation of crystalline silicon solar cells: a review", Prog. Photovolt: Res. Appl., vol. 8, No. 5, pp. 473-487, Sep. 2000. 

   상세보기

4. S. Winderbaum, F. Yun, and O. Reinhold, "Application of plasma enhanced chemical vapor deposition silicon nitride as a double layer antireflection coating and passivation layer for polysilicon solar cells", J. Vac. Sci. Technol. A, vol. 15, No. 3, pp. 1020-1025, May 1997. 

   상세보기

5. F. L. Wong, M. K. Fung, S. L. Tao, S. L. Lai, W. M. Tsang, K. H. Kong, W. M. Choy, C. S. Lee, and S. T. Lee, "Long-lifetime thin-film encapsulated organic light-emitting diodes", J. Appl. Phys., vol. 104, No. 1, pp. 014509 (4pp), Jul. 2008. 

   상세보기

6. A. Masuda, H. Umemoto, and H. Matsumura, "Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films", Thin Solid Films, vol. 501, No. 1-2, pp. 149-153, Apr. 2006. 

   상세보기

7. M. Bavafa, H. Ilati, and B. Rashidian, "Comprehensive simulation of the effects of process conditions on plasma enhanced chemical vapor deposition of silicon nitride", Semicond. Sci. Technol., vol. 23, No. 9, pp. 095023 (19pp), Aug. 2008. 

   상세보기

8. H. J. Kim, W. Yang, and J. Joo, "Effect of electrode spacing on the density distributions of electrons, ions, and metastable and radical molecules in $SiH_4/NH_3/N_2/He$ capacitively coupled plasmas", J. Appl. Phys., vol. 118, No. 4, pp. 043304 (18 pp), Jul. 2015. 

   상세보기

9. COMSOL Multiphysics Version 5.2 User Guide, Nov. 2015. 

10. A. O. Brezmes and C. Breitkopf, "Fast and reliable simulations of argon inductively coupled plasma using COMSOL", Vacuum, vol. 116, pp. 65-72, Jun. 2015. 

    상세보기

11. E. Gogolides and H. H. Sawin, "Continuum modeling of radio-frequency glow discharges. I. Theory and results for electropositive and electronegative gases", J. Appl. Phys., vol 72, No. 9, pp. 3971-3987, Nov. 1992. 

    상세보기

12. E. Tatarova, F. M. Dias, E. Felizardo, J. Henriques, M. J. Pinheiro, C. M. Ferreira, and B. Gordiets, "Microwave air plasma source at atmospheric pressure: Experiment and theory", J. Appl. Phys., vol. 108, No. 12, pp. 123305 (18 pp), Dec. 2010. 

    상세보기

13. F. J. Gordillo-Vazquez, "Air plasma kinetics under the influence of sprites", J. Phys. D: Appl. Phys., vol. 41, No. 23, pp. 234016 (33 pp), Nov. 2008. 

    상세보기

14. Q. Xiong, A. Y. Nikiforov, X. P. Lu, and C. Leys, "High-speed dispersed photographing of an open-air argon plasma plume by a grating-ICCD camera system", J. Phys. D: Appl. Phys., vol. 43, No. 41, pp. 415201 (10 pp), Sep. 2010. 

    상세보기

15. E. Tatarova, F. M. Dias, B. Gordiets, and C. M. Ferreira, "Molecular dissociation in $N_2-H_2$ microwave discharges", Plasma Sources Sci. Technol., vol. 14, No. 1, pp. 19-31, Feb. 2005. 

    상세보기

16. A. Bogaerts, "Hybrid Monte Carlo - Fluid model for studying the effects of nitrogen addition to argon glow discharges", Spectrochim. Acta Part B, vol. 64, No. 2, pp. 126-140, Feb. 2009. 

    상세보기

17. G. R. Nowling, S. E. Babayan, X. Yang, M. Moravej, R. Agarwal, and R. F. Hicks, "The reactions of silane in the afterglow of a helium-nitrogen plasma", Plasma Sources Sci. Technol., vol. 13, No. 1, pp. 156-163, Feb. 2004. 

    상세보기

18. A. Dollet, J. P. Couderc, and B. Despax, "Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. Part I: bidimensional modelling", Plasma Sources Sci. Technol., vol. 4, No. 1, pp. 94-106, Feb. 1995. 

    상세보기

19. M. J. Kushner, "Simulation of the gas-phase processes in remote-plasma-activated chemical -vapor deposition of silicon dielectrics using rare gas-silane-ammonia mixtures", J. Appl. Phys., vol. 71, No. 9, pp. 4173-4189, May 1992. 

    상세보기

20. L. Xiang-Mei, S. Yuan-Hong, J. Wei, and Y. Lin, "The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled $SiH_4/NH_3/N_2$ plasmas: Two-dimensional simulations", Chin. Phys. B, vol. 22, No. 4, pp. 045204 (6 pp), Apr. 2013. 

    상세보기

21. P. J. van den Oever, J. H. van Helden, J. L. van Hemmen, R. Engeln, D. C. Schram, M. C. M. van de Sanden, and W. M. M. Kessels, "N, NH, and $NH_2$ radical densities in a remote $Ar-NH_3-SiH_4$ plasma and their role in silicon nitride deposition", J. Appl. Phys., vol. 100, No. 9, pp. 093303 (10 pp), Nov. 2006. 

    상세보기

22. D. T. Murley, R. A. G. Gibson, B. Dunnett, A. Goodyear, and I. D. French, "Influence of gas residence time on the deposition of nitrogen-rich amorphous silicon nitride", J. Non-Cryst. Solids, vol. 187, pp. 324-328, Jan. 1995. 

    상세보기

23. J. A. Theil, S. V. Hattangady, and G. Lucovsky, "Effects of $NH_3$ and $N_2$ source gases and plasma excitation frequencies on the reaction chemistry for $Si_3N_4$ thin-film growth by remote plasma-enhanced chemical-vapor deposition", J. Vac. Sci. Technol. A, vol. 10, No. 4, pp. 719-727, Jul. 1992. 

    상세보기

24. D. L. Smith, "Controlling the plasma chemistry of silicon nitride and oxide deposition from silane", J. Vac. Sci. Technol. A, vol. 11, No. 4, pp. 1843-1850, Jul. 1993. 

    상세보기

25. C. Bohm, J. Perrin, and P. R. i Cabarrocas, "Ion-induced secondary electron emission in $SiH_4$ glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate", J. Appl. Phys., vol. 73, No. 5, pp. 2578-2580, Mar. 1993. 

    상세보기

저자의 다른 논문 :

서권상 (2) 김동현 (31) 이호준 (20)