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NTIS 바로가기As one of the most versatile semiconductors, zinc oxide (ZnO) with one-dimensional (1-D) nanostructures has been significantly developed for the application of ultraviolet (UV) lasers, photochemical sensors, photocatalysts, and so on. Such 1-D nanowires could be easily achieved due to the anisotropi...
핵심어 | 질문 | 논문에서 추출한 답변 |
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UV-laser 기술 사용 시 ZnO의 threshold power density이 높아지는 이유는? | laser threshold power density 값을 낮추기 위해서는 cavity length를 늘리거나 reflecting mirror planes 의 reflectance를 증가시켜야 한다.7),8) 그러나 ZnO의 crystal 특성상 [0001] direction으로 빠르게 자라나려는 anisotropic crystal growth rate (V[0001] >> V[0110] > V[0001])으로9) 인해 crystal이 rod형태로 자라날수록 reflecting mirror planes으로 작용하는(0001)면의 면적이 줄어들게 되어 laser threshold power density 값이 증가하게 된다. 실제로 P. | |
Wurzite structure를 가지는 ZnO가 polariton lasing이 가능한 이유는? | Wurzite structure를 갖는 ZnO는 3.37eV의 direct wide band-gap을 가지고 있으며 Exciton binding energy가 60 meV로써 room-temperature의 thermal energy인 26 meV보다 크기 때문에 polariton lasing이 가능하다.4-6) 따라서 기존 laser가 갖는 복잡한 multistacking quantum-well structure가 없어도 ZnO 자체로 UV-laser로 활용될 수 있기 때문에 2000년대 초반 UV-laser 기반의 Blue-lay disc의 핵심기술로 주목 받게 되었다. | |
UV-laser은 어떤 단점이 있는가? | 4-6) 따라서 기존 laser가 갖는 복잡한 multistacking quantum-well structure가 없어도 ZnO 자체로 UV-laser로 활용될 수 있기 때문에 2000년대 초반 UV-laser 기반의 Blue-lay disc의 핵심기술로 주목 받게 되었다. 그러나 UV-laser는 IR-laser와 비교하여 bandgap이 큰 물질을 사용해야 하기 때문에 laseremission을 위한 threshold power density 값이 매우 크다는 단점이 있으며 이로 인해 optoelectronic device 에서 열이 많이 발생하게 된다. laser threshold power density 값을 낮추기 위해서는 cavity length를 늘리거나 reflecting mirror planes 의 reflectance를 증가시켜야 한다. |
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