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NTIS 바로가기반도체디스플레이기술학회지 = Journal of the semiconductor & display technology, v.17 no.4, 2018년, pp.16 - 20
신재수 (대전대학교 신소재공학과) , 최은미 (한국표준과학연구원 소재에너지융합측정센터)
Graphene is attracting attention due to its outstanding properties as line material for next-generation semiconductor. Graphene pattern technology is essential to apply graphene line. Selective graphene oxide reduction as one of graphene pattern method does not require a substrate thereby a high fle...
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핵심어 | 질문 | 논문에서 추출한 답변 |
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그래핀을 성장시킨 후 직접적으로 그래핀을 커팅하여 패턴하는 방법의 문제점은? | 그러나, 별도의 기판과 초점 이온 빔(focus ion beam, FIB)와 같은 고가의 레이저 장비가 필요하고, 전사 과정에서 그래핀의 주름이 발생될 수 있다. | |
그래핀을 패턴 하기 위한 방법은 무엇이 있는가? | 그러나, 그래핀을 반도체의 배선 물질로 적용 하기 위해서는 그래핀의 전기적 특성을 제어하기 위한 패터닝(pattering) 기술이 요구된다. 그래핀을 패턴 하기 위한 방법은 크게 그래핀을 성장 시킨 후 그래핀을 커팅하는 방법과 그래핀 옥사이드 (graphene oxide, GO)를 부분적을 환원시켜 원하는 배선을 형성하는 방법 두 가지로 나눌 수 있다[6, 7]. 그래핀을 성장시킨 후 직접적으로 그래핀을 커팅하여 패턴하는 방법은 우수한 특성의 그래핀을 성장 시킬 수 있고 정밀 패턴이 가능하다는 장점이 있다[8, 9]. | |
그래핀이 반도체 디바이스의 배선라인으로 적용될 경우 얻을 수 있는 기대효과는? | 특히, 반도체 디바이스의 배선라인으로 적용될 경우 그래핀의 높은 캐리어 이동도(200,000 cm2/vs) 로 인하여 RC지연(RC delay) 저하를 기대 할 수 있으며, 2 X 108 A/cm2 의 높은 허용 전류 밀도(high maximum current density)를 가져 향상된 전자이주현상(electro migration, EM)에 대한 저항 특성 또한 기대할 수 있다[3]. 더하여, 그래핀 트랜지스터가 427GHz의 높은 차단 주파수(cut-off frequency, fT)을 기록하며 excellent radio-frequency characteristics 보여주었다[4]. |
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